IXYH40N120C3 Datasheet IXYH40N120C3 | P1-P3

IXYH40N120C3

V

CES

= 1200V

I

C110

= 40A

V

CE(sat)







3.5V

t

fi(typ)

= 50ns

DS100416B(5/16)

G = Gate C = Collector

E = Emitter Tab = Collector

TO-247 AD

G

C

E

Tab

High-Speed IGBT

for 20-50 kHz Switching

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250A, V

GE

= 0V 1200 V

V

GE(th)

I

C

= 250A, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 10 A

T

J

= 150C 750 μA

I

GES

V

CE

= 0V, V

GE

= 20V 100 nA

V

CE(sat)

I

C

= 40A, V

GE

= 15V, Note 1 2.9 3.5 V

T

J

= 150C 3.7 V

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 1200 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1M 1200 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C (Chip Capability) 90 A

I

C110

T

C

= 110°C 40 A

I

CM

T

C

= 25°C, 1ms 175 A

I

A

T

C

= 25°C 20 A

E

AS

T

C

= 25°C 400 mJ

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 10 I

CM

= 80 A

(RBSOA) Clamped Inductive Load @V

CE

 V

CES

P

C

T

C

= 25°C 577 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque 1.13/10 Nm/lb.in.

Weight 6g

1200V XPT

TM

IGBT

GenX3

TM

Features



Optimized for Low Switching Losses



Square RBSOA



Positive Thermal Coefficient of

Vce(sat)



Avalanche Rated



High Current Handling Capability



International Standard Package

Advantages



High Power Density



Low Gate Drive Requirement

Applications



High Frequency Power Inverters



UPS



Motor Drives



SMPS



PFC Circuits



Battery Chargers



Welding Machines



Lamp Ballasts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYH40N120C3

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 40A, V

CE

= 10V, Note 1 11 18 S

C

ie

s

1870 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 107 pF

C

res

38 pF

Q

g(on)

80 nC

Q

ge

I

C

= 40A, V

GE

= 15V, V

CE

= 0.5 • V

CES

14 nC

Q

gc

37 nC

t

d(on)

18 ns

t

ri

64 ns

E

on

3.8 mJ

t

d(off)

133 ns

t

fi

50 ns

E

of

f

1.1 mJ

t

d(on)

22 ns

t

ri

73 ns

E

on

6.6 mJ

t

d(off)

160 ns

t

fi

143 ns

E

off

2.1 mJ

R

thJC

0.26 °C/W

R

thCS

0.21 °C/W

Inductive load, T

J

= 25°C

I

C

= 40A, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 10

Note 2

Inductive load, T

J

= 150°C

I

C

= 40A, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 10

Note 2

1 - Gate

2,4 - Collector

3 - Emitter

TO-247 (IXYH) Outline

3

D

S

A

L

D

R

E

E1

L1

D1

D2

A2

Q

C

B

A

0P 0K M D B M

b4

0P1

1

2

4

b

c

e

IXYS OPTION

R1R1R1R1

J M C A M

b2

A1

IXYH40N120C3

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

10

20

30

40

50

60

70

80

0123456

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

12V

7V

9V

6V

8V

10V

11V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

140

160

180

0 5 10 15 20 25 30

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

12V

9V

13V

10V

7V

6V

11V

14V

8V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

10

20

30

40

50

60

70

80

012345678

V

CE

- Volts

I

C

- Amperes

9V

8V

10V

V

GE

= 15V

13V

12V

6V

7V

11V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 40A

I

C

= 20A

I

C

= 80A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

1

2

3

4

5

6

7

8

9

10

7 8 9 101112131415

V

GE

- Volts

V

CE

- Volts

I

C

= 80A

T

J

= 25ºC

40A

20A

Fig. 6. Input Admittance

0

20

40

60

80

100

4 5 6 7 8 9 10 11 12

V

GE

- Volts

I

C

-

Amperes

T

J

= - 40ºC

25ºC

150ºC

IXYH40N120C3

IXYH40N120C3

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