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IXYH40N120C3
P1-P3
P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH40N120C3
Fi
g. 11. Maxi
mum Transi
ent Thermal
I
mpedance
0.0
01
0.
01
0.1
1
0.
00001
0.0
001
0.
001
0.
01
0.
1
1
Pu
lse W
i
dth
-
Sec
on
d
Z
(th)J
C
- K
/ W
Fi
g. 7. Transc
onductanc
e
0
4
8
12
16
20
24
28
0
1
02
0
3
04
05
06
07
0
8
0
9
0
1
0
0
1
1
0
I
C
- A
mp
e
re
s
g
f s
-
Si
emens
T
J
= - 40
ºC
25º
C
150º
C
Fi
g. 10. Rev
erse-Bi
as Safe Oper
ati
ng Area
0
10
20
30
40
50
60
70
80
90
200
300
400
500
600
700
8
00
900
1000
1100
1200
1300
V
CE
- V
o
lts
I
C
- A
m
p
e
re
s
T
J
= 15
0ºC
R
G
= 10
Ω
dv
/ dt
< 10V /
ns
Fi
g. 8. G
ate Ch
arge
0
2
4
6
8
10
12
14
16
0
1
02
03
04
05
06
07
0
8
0
Q
G
- Nano
C
o
ul
o
m
b
s
V
GE
- V
o
lts
V
CE
= 600V
I
C
= 40
A
I
G
= 10
mA
Fi
g. 9.
Capaci
ta
nce
10
100
1,0
00
10,000
0
5
10
15
20
25
30
35
40
V
CE
- V
o
lts
Capaci
t
ance -
PicoFar
ad
s
f
= 1 MHz
C
ies
C
oes
C
res
© 2016 IXYS CORPORATION, All Rights Reserved
IXYH40N120C3
Fi
g. 12. I
nducti
v
e Sw
i
tchi
ng Energ
y Loss v
s.
Gat
e Resi
stance
0
1
2
3
4
5
6
7
10
15
20
25
30
35
40
45
5
0
55
R
G
- Ohm
s
E
off
- M
illiJ
o
u
le
s
0
4
8
12
16
20
24
28
E
on
- M
illiJ
o
u
le
s
E
off
E
on
T
J
= 150º
C , V
GE
= 15
V
V
CE
= 6
00
V
I
C
= 40A
I
C
= 80A
Fi
g. 15. I
nducti
v
e Turn-
off Sw
i
tchi
ng Ti
mes v
s.
G
ate R
esi
st
ance
40
60
80
100
120
140
160
180
200
10
15
20
2
5
30
35
40
45
50
55
R
G
- Ohm
s
t
f i
- Nanoseconds
100
150
200
250
300
350
400
450
500
t
d(
off)
-
Nanoseconds
t
f i
t
d(off)
T
J
= 150º
C, V
GE
= 15
V
V
CE
= 6
00
V
I
C
= 40
A
I
C
= 80A
Fi
g. 13. In
ducti
v
e
Sw
i
tchi
ng Energy
Loss v
s.
Coll
e
cto
r Curren
t
0
1
2
3
4
5
20
30
40
50
60
70
80
I
C
-
Amperes
E
off
- M
illiJ
o
u
le
s
0
4
8
12
16
20
E
on
- M
illiJ
o
u
le
s
E
off
E
on
R
G
= 10
Ω
V
GE
= 15V
V
CE
= 6
00
V
T
J
= 150º
C
T
J
= 25
ºC
Fi
g. 14. In
ducti
v
e
Sw
i
tchi
ng Energy
Loss v
s.
Juncti
on Temperatu
re
0
1
2
3
4
5
25
50
75
100
125
150
T
J
-
Degrees C
ent
i
gra
de
E
of
f
- MilliJoule
s
0
4
8
12
16
20
E
on
- Mi
lliJ
ou
le
s
E
off
E
on
R
G
= 10
Ω
V
GE
= 15
V
V
CE
= 600V
I
C
= 40
A
I
C
= 80
A
Fi
g. 16. Induct
ive
Turn-
off Sw
it
ching Ti
me
s v
s.
Col
lector
Curr
e
nt
0
40
80
120
160
200
240
20
30
40
50
60
70
80
I
C
- Am
p
e
res
t
f i
- Nanoseconds
100
120
140
160
180
200
220
t
d
(o
ff)
-
Nanoseconds
t
f i
t
d(off)
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 60
0V
T
J
= 25
º
C
T
J
= 150º
C
Fi
g. 17. I
nducti
v
e Turn-of
f Sw
it
ching T
imes v
s.
Juncti
on Temperature
40
60
80
100
120
140
160
25
50
75
100
125
150
T
J
-
Degrees Cen
ti
gra
de
t
f i
- N
a
n
o
s
e
c
o
n
d
s
110
120
130
140
150
160
170
t
d
(o
ff)
-
Nanoseconds
t
f i
t
d(off)
R
G
= 10
Ω
, V
GE
= 15
V
V
CE
= 600V
I
C
= 40
A
I
C
= 80
A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH40N120C3
IXYS REF: IXY_40N120C3(4A-Z92) 5-09-16-A
Fi
g. 19. I
nducti
v
e Turn-
on Sw
it
chi
ng Ti
me
s v
s.
Col
l
ec
tor Cur
rent
0
20
40
60
80
100
120
140
160
180
200
20
30
40
50
60
70
80
I
C
-
Amper
es
t
r i
- Nanoseconds
9
12
15
18
21
24
27
30
33
36
39
t
d(on)
-
Nanoseconds
t
r i
t
d(on)
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 25º
C
T
J
= 150º
C
Fi
g. 20. I
nducti
v
e
Turn
-on Sw
it
ching
Times v
s.
Juncti
on Temperat
ure
0
40
80
120
160
200
240
280
25
50
75
100
125
150
T
J
-
Degrees C
ent
i
gra
de
t
r i
-
Nanoseconds
12
16
20
24
28
32
36
40
t
d(on)
-
Nanoseconds
t
r i
t
d(on)
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 80A
I
C
= 40A
Fi
g. 18. I
nducti
v
e Turn-on S
w
i
tchi
ng Ti
mes v
s.
Gat
e Resi
stance
0
50
100
150
200
250
300
350
400
10
15
20
25
30
35
40
45
50
55
R
G
- Ohm
s
t
r i
-
Nanoseconds
10
20
30
40
50
60
70
80
90
t
d(
on)
-
Nanoseconds
t
r i
t
d(on)
T
J
= 15
0
ºC
, V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
P1-P3
P4-P6
IXYH40N120C3
Mfr. #:
Buy IXYH40N120C3
Manufacturer:
Littelfuse
Description:
IGBT Transistors GenX3 1200V XPT IGBT
Lifecycle:
New from this manufacturer.
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IXYH40N120C3