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VS-10ETF04FP-M3

P1-P3P4-P6P7-P8
VS-10ETF02FP-M3, VS-10ETF04FP-M3, VS-10ETF06FP-M3
www.vishay.com
Vishay Semiconductors
Revision: 15-Sep-17
1
Document Number: 96293
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Soft Recovery Rectifier Diode, 10 A
FEATURES
• Glass passivated pellet chip junction
• 150 °C max. operation junction temperature
• Designed and qualified according to
JEDEC
®
-JESD 47
• Fully isolated package (V
INS
= 2500 V
RMS
)
• UL pending
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-10ETF0..FP... fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
PRIMARY CHARACTERISTICS
I
F(AV)
10 A
V
R
200 V, 400 V, 600 V
V
F
at I
F
1.2 V
I
FSM
160 A
t
rr
50 ns
T
J
max. 150 °C
Snap factor 0.5
Package 2L TO-220 FullPAK
Circuit configuration Single
2
Anode
1
Cathode
2L TO-220 FullPAK
2
1
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
RRM
200 to 600 V
I
F(AV)
Sinusoidal waveform 10
A
I
FSM
160
t
rr
1 A, 100 A/µs 50 ns
V
F
10 A, T
J
= 25 °C 1.2 V
T
J
-40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-10ETF02FP-M3 200 300
3VS-10ETF04FP-M3 400 500
VS-10ETF06FP-M3 600 700
VS-10ETF02FP-M3, VS-10ETF04FP-M3, VS-10ETF06FP-M3
www.vishay.com
Vishay Semiconductors
Revision: 15-Sep-17
2
Document Number: 96293
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 98 °C, 180° conduction half sine wave 10
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 150
10 ms sine pulse, no voltage reapplied 160
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 112.5
A
2
s
10 ms sine pulse, no voltage reapplied 160
Maximum I
2
t for fusing I
2
t t = 0.1 to 10 ms, no voltage reapplied 1600 A
2
s
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
10 A, T
J
= 25 °C 1.2 V
Forward slope resistance r
t
T
J
= 150 °C
23.5 m
Threshold voltage V
F(TO)
0.85 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.1
mA
T
J
= 150 °C 3.0
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
rr
I
F
at 10 A
pk
25 A/μs
25 °C
200 ns
Reverse recovery current I
rr
2.75 A
Reverse recovery charge Q
rr
0.32 μC
Snap factor S0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-40 to +150 °C
Maximum thermal resistance
junction to case
R
thJC
DC operation 2.5
°C/W
Maximum thermal resistance
junction to ambient
R
thJA
62
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth, and greased 0.5
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style 2L TO-220 FullPAK
10ETF02FP
10ETF04FP
10ETF06FP
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
VS-10ETF02FP-M3, VS-10ETF04FP-M3, VS-10ETF06FP-M3
www.vishay.com
Vishay Semiconductors
Revision: 15-Sep-17
3
Document Number: 96293
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
110
100
90
80
150
0
6
Maximum Allowable CaseTemperature (°C)
Average Forward Current (A)
428
130
60°30° 90° 180°
10 12
R
thJC
(DC) = 2.5 °C/W
140
120
120°
Ø
Conduction angle
110
100
90
150
010
Maximum Allowable CaseTemperature (°C)
Average Forward Current (A)
6
212
130
60°30° 180°
16 18
R
thJC
(DC) = 2.5 °C/W
140
120
Ø
Conduction period
DC
48 14
90° 120°
4
0
16
0
Maximum Average ForwardPower Loss (W)
Average Forward Current (A)
8
10
10
T
J
= 150 °C
12
8
46
180°
RMS limit
Conduction angle
2
2
6
14
60°
30°
90°
120°
Ø
4
0
20
0
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
12
12
16
T
J
= 150 °C
16
8
Ø
Conduction period
DC
48
60°
30°
180°
90°
120°
RMS limit
160
80
40
1 10 100
Peak Half Sine Wave Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
140
60
100
120
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
At any rated load condition and with
rated V
RRM
applied following surge.
180
80
40
0.01 0.1 1
Peak Half Sine Wave Forward Current (A)
Pulse Train Duration (s)
140
60
100
120
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Maximum non-repetitive surge current
vs. pulse train duration.
160
P1-P3P4-P6P7-P8

VS-10ETF04FP-M3

Mfr. #:
Buy VS-10ETF04FP-M3
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers New Input Diodes - FULLPAK-220-e3
Lifecycle:
New from this manufacturer.
Delivery:
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