VS-10ETF02FP-M3, VS-10ETF04FP-M3, VS-10ETF06FP-M3
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Vishay Semiconductors
Revision: 15-Sep-17
4
Document Number: 96293
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Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
100
10
1
0.5 1.0 1.5 2.0 2.5 3.0
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
t
rr
- Typical Reverse Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0
0.1
0.2
0.3
0.4
0 40 80 120 160 200
1 A
5 A
10 A
T
J
= 25 °C
I = 20 A
FM
8 A
2 A
0.4
0.3
0
0 40 80 120 160 200
t
rr
- Typical Reverse Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
T
J
= 150 °C
0.1
0.2
I
FM
= 20 A
I
FM
= 1 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 2 A
1.4
0.6
0
0 40 80 120 160 200
Q
rr
- Typical Reverse Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
T
J
= 25 °C
0.2
0.4
1.0
0.8
1.2
I
FM
= 20 A
I
FM
= 1 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 2 A
2.5
1.5
0
0 40 80 120 160 200
Q
rr
- Typical Reverse Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
T
J
= 150 °C
0.5
1.0
2.0
I
FM
= 20 A
I
FM
= 1 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 2 A
15
9
0
0 40 80 120 160 200
I
rr
- Typical Reverse Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
T
J
= 25 °C
3
6
12
I
FM
= 20 A
I
FM
= 1 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 2 A
