NTD5802NT4G

© Semiconductor Components Industries, LLC, 2014
May, 2017 Rev. 8
1 Publication Order Number:
NTD5802N/D
NTD5802N, NVD5802N
Power MOSFET
40 V, Single NChannel, 101 A DPAK
Features
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
MSL 1/260°C
100% Avalanche Tested
NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
Applications
CPU Power Delivery
DCDC Converters
Motor Driver
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DraintoSource Voltage V
DSS
40 V
GatetoSource Voltage V
GS
±20 V
Continuous Drain Cur-
rent (R
q
JC
) (Note 1)
Steady
State
T
C
= 25°C
I
D
101
A
T
C
= 85°C 78
Power Dissipation
(R
q
JC
) (Note 1)
T
C
= 25°C P
D
93.75 W
Continuous Drain Cur-
rent (R
q
JA
) (Note 1)
T
A
= 25°C
I
D
16.4
A
T
A
= 85°C 12.7
Power Dissipation
(R
q
JA
) (Note 1)
T
A
= 25°C P
D
2.5 W
Pulsed Drain Current
t
p
=10ms
T
A
= 25°C I
DM
300 A
Current Limited by Package T
A
= 25°C I
DmaxPkg
45 A
Operating Junction and Storage Temperature T
J
, T
stg
55 to
175
°C
Source Current (Body Diode) I
S
50 A
Drain to Source dV/dt dV/dt 6.0 V/ns
Single Pulse DraintoSource Avalanche En-
ergy (V
DD
= 32 V, V
GS
= 10 V,
L = 0.3 mH, I
L(pk)
= 40 A, R
G
= 25 W)
E
AS
240 mJ
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
CASE 369C
DPAK
(Bent Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
40 V
4.4 mW @ 10 V
R
DS(on)
101 A
I
D
V
(BR)DSS
7.8 mW @ 5.0 V
www.onsemi.com
1
2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
NChannel
D
S
G
1
Gate
2
Drain
3
Source
4
Drain
AYWW
58
02NG
A = Assembly Location*
Y = Year
WW = Work Week
5802N = Device Code
G = PbFree Package
50 A
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
NTD5802N, NVD5802N
www.onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
JunctiontoCase (Drain)
R
q
JC
1.6
°C/W
JunctiontoAmbient Steady State (Note 1)
R
q
JA
60
JunctiontoAmbient Steady State (Note 2)
R
q
JA
105
1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10 mA
40 V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
40 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25°C 1.0 mA
T
J
= 150°C 50
GatetoSource Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.5 3.5 V
Negative Threshold Temperature Co-
efficient
V
GS(TH)
/T
J
7.4 mV/°C
DraintoSource On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 50 A 3.6 4.4 mW
V
GS
= 5.0 V, I
D
= 50 A 6.5 7.8
Forward Transconductance gFS V
DS
= 15 V, I
D
= 15 A 16.8 S
CHARGES AND CAPACITANCES
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 12 V
5300
pF
Output Capacitance C
oss
850
Reverse Transfer Capacitance C
rss
550
Input Capacitance C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
5025
pF
Output Capacitance C
oss
580
Reverse Transfer Capacitance C
rss
400
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 50 A
75 100
nC
Threshold Gate Charge Q
G(TH)
6.0
GatetoSource Charge Q
GS
18
GatetoDrain Charge Q
GD
15
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
t
d(on)
V
GS
= 10 V, V
DS
= 20 V,
I
D
= 50 A, R
G
= 2.0 W
14
ns
Rise Time t
r
52
TurnOff Delay Time t
d(off)
39
Fall Time t
f
8.5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD5802N, NVD5802N
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted) (continued)
Parameter UnitMaxTypMinTest ConditionSymbol
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 50 A
T
J
= 25°C 0.9 1.2
V
V
GS
= 0 V,
I
S
= 20 A
T
J
= 25°C 0.8 1.0
Reverse Recovery Time t
RR
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 50 A
25
ns
Charge Time ta 15
Discharge Time tb 10
Reverse Recovery Charge Q
RR
15 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.

NTD5802NT4G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET 101A, 40V, 4.2mOhms N-Channel
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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