NTD5802N, NVD5802N
www.onsemi.com
4
TYPICAL PERFORMANCE CHARACTERISTICS
7 V
100
1000
10000
100000
2 6 10 14 18 22 26 30 34 38
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
0
50
100
150
23456
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0.009
0.010
0.011
0.012
0.013
0.014
0.015
30 50 70 90 110 130 150 170 190
V
GS
= 5 V
T
J
= 25°C
V
GS
= 10 V
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
−50 −25 0 25 50 75 100 125 150 175
I
D
= 50 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 150°C
T
J
= 100°C
0
20
100
140
012 56
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
34
40
60
80
120
160
180
T
J
= 25°C
V
GS
= 5 V
10 V
6 V
4 V
4.5 V
4.2 V
3.8 V
3.6 V
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
I
D
, DRAIN CURRENT (A)
T
J
= 150°C
T
J
= −55°C
V
GS
= 10 V
0.002
0.006
0.010
10 30 70 150 19090 130
0.004
0.008
T
J
= 25°C
50 110 170