NTD5802NT4G

NTD5802N, NVD5802N
www.onsemi.com
4
TYPICAL PERFORMANCE CHARACTERISTICS
7 V
100
1000
10000
100000
2 6 10 14 18 22 26 30 34 38
V
GS
, GATETOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (A)
Figure 3. OnResistance vs. Drain Current Figure 4. OnResistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. DraintoSource Leakage Current
vs. Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (V)
R
DS(on)
, DRAINTOSOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
0
50
100
150
200
23456
V
DS
10 V
T
J
= 25°C
T
J
= 55°C
T
J
= 100°C
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0.009
0.010
0.011
0.012
0.013
0.014
0.015
30 50 70 90 110 130 150 170 190
V
GS
= 5 V
T
J
= 25°C
V
GS
= 10 V
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
50 25 0 25 50 75 100 125 150 175
I
D
= 50 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 150°C
T
J
= 100°C
0
20
100
140
200
012 56
V
DS
, DRAINTOSOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
34
40
60
80
120
160
180
T
J
= 25°C
V
GS
= 5 V
10 V
6 V
4 V
4.5 V
4.2 V
3.8 V
3.6 V
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
I
D
, DRAIN CURRENT (A)
T
J
= 150°C
T
J
= 55°C
V
GS
= 10 V
0.002
0.006
0.010
10 30 70 150 19090 130
0.004
0.008
T
J
= 25°C
50 110 170
NTD5802N, NVD5802N
www.onsemi.com
5
TYPICAL PERFORMANCE CHARACTERISTICS
V
SD
, SOURCETODRAIN VOLTAGE (V)
1
10
100
1000
1 10 100
Figure 7. Capacitance Variation
Q
g
, TOTAL GATE CHARGE (nC)
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
V
GS
, GATETOSOURCE VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
Figure 10. Diode Forward Voltage vs. Current
t, TIME (ns)
I
D
= 50 A
T
J
= 25°C
V
GS
Q
DS
V
DD
= 20 V
I
D
= 50 A
V
GS
= 10 V
t
r
t
d(off)
t
d(on)
t
f
Q
GS
Q
T
V
DS
V
DS
, DRAINTOSOURCE VOLTAGE (V)
GATETOSOURCE OR DRAINTOSOURCE VOLT-
AGE (V)
C, CAPACITANCE (pF)
0
1000
2000
3000
4000
5000
6000
7000
8000
105 0 5 10152025303540
C
iss
C
oss
C
rss
V
GS
= 0 V
T
J
= 25°C
V
DS
V
GS
0
3
6
9
12
15
020406080
0
6
12
18
24
30
V
GS
= 0 V
T
J
= 25°C
0.4 0.8 1.40.6 1.0 1.2
0
10
20
30
40
50
60
I
S
, SOURCE CURRENT (A)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAINTOSOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
0.1
10
100
1000
0.1 10 100
10 ms
100 ms
1 ms
10 ms
dc
V
GS
= 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
1
1
NTD5802N, NVD5802N
www.onsemi.com
6
TYPICAL PERFORMANCE CHARACTERISTICS
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t, PULSE TIME (s)
Figure 12. Thermal Response
r(t), Effective Transient Thermal Resistance
(°C/W)
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
ORDERING INFORMATION
Order Number Package Shipping
NTD5802NT4G DPAK
(PbFree)
2500 / Tape & Reel
NVD5802NT4G* DPAK
(PbFree)
2500 / Tape & Reel
NVD5802NT4GVF01 DPAK
(PbFree)
2500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP
Capable.

NTD5802NT4G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET 101A, 40V, 4.2mOhms N-Channel
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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