SI8429DB-T1-E1 Datasheet SI8429DB-T1-E1 | P1-P3

Si8429DB

www.vishay.com

Vishay Siliconix

S15-1692-Rev. E, 20-Jul-15

1

Document Number: 74399

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-Channel 1.2 V (G-S) MOSFET

Marking: 8429

Ordering Information: 

Si8429DB-T1-E1 (lead (Pb)-free and halogen-free)

FEATURES

• TrenchFET

®

power MOSFET

• Industry first 1.2 V rated MOSFET

• Ultra small MICRO FOOT

®

chipscale packaging

reduces footprint area, profile (0.62 mm) and

on-resistance per footprint area

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Low threshold load switch for

portable devices

- Low power consumption

- Increased battery life

• Ultra low voltage load switch

Notes

a. Based on T

C

= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Refer to IPC / JEDEC

®

(J-STD-020), no manual or hand soldering.

e. In this document, any reference to the case represents the body of the MICRO FOOT device and foot is the bump.

Notes

a. Surface mounted on 1" x 1" FR4 board.

b. Maximum under steady state conditions is 85 °C/W.

PRODUCT SUMMARY

V

DS

(V) R

DS(on

) ()I

D

(A)

a

Q

g

(TYP.)

-8

0.035 at V

GS

= -4.5 V -11.7

21 nC

0.042 at V

GS

= -2.5 V -10.7

0.052 at V

GS

= -1.8 V -9.6

0.069 at V

GS

= -1.5 V -8.3

0.098 at V

GS

= -1.2 V -1.02

MICRO FOOT

®

1.6 x 1.6

Bump Side View

1

G

4

S

D

3

D

2

Backside View

1

1.6 mm

8429

xxx

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

-8

V

Gate-Source Voltage V

GS

± 5

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

-11.7

A

T

C

= 70 °C -9.4

T

A

= 25 °C -7.8

b, c

T

A

= 70 °C -6.3

b, c

Pulsed Drain Current I

DM

-25

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

-5.7

T

C

= 70 °C -2.5

b, c

Maximum Power Dissipation

T

A

= 25 °C

P

D

6.25

W

T

A

= 70 °C 4

T

C

= 25 °C 2.77

b, c

T

C

= 70 °C 1.77

b, c

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +150

°C

Package Reflow Conditions

d

IR / convection 260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient

a, b

R

thJA

35 45

°C/W

Maximum Junction-to-Foot (Drain) Steady state R

thJF

16 20

Si8429DB

www.vishay.com

Vishay Siliconix

S15-1692-Rev. E, 20-Jul-15

2

Document Number: 74399

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= -250 μA -8 - - V

V

DS

Temperature Coefficient

V

DS

/T

J

I

D

= -250 μA

--7.5-

mV/°C

V

GS(th)

Temperature Coefficient V

GS(th)

/T

J

--2.2-

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= -250 μA -0.35 - -0.8

V

DS

= V

GS

, I

D

= -5 mA - -0.6 -

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 5 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 8 V, V

GS

= 0 V - - -1

μA

V

DS

= -8 V, V

GS

= 0 V, T

J

= 70 °C - - -10

On-State Drain Current

a

I

D(on)

V

DS

 5 V, V

GS

= -4.5 V -5 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= -4.5 V, I

D

= -1 A - 0.029 0.035



V

GS

= -2.5 V, I

D

= -1 A - 0.035 0.042

V

GS

= -1.8 V, I

D

= -1 A - 0.043 0.052

V

GS

= -1.5 V, I

D

= -1 A - 0.051 0.069

V

GS

= -1.2 V, I

D

= -1 A - 0.065 0.098

Forward Transconductance

a

g

fs

V

DS

= -4 V, I

D

= -1 A - 0.7 1.2 S

Dynamic

b

Input Capacitance C

iss

V

DS

= -4 V, V

GS

= 0 V, f = 1 MHz

- 1640 -

pFOutput Capacitance C

oss

- 590 -

Reverse Transfer Capacitance C

rss

- 380 -

Total Gate Charge Q

g

V

DS

= -4 V, V

GS

= -5 V, I

D

= -1 A - 24 26

nC

V

DS

= -4 V, V

GS

= -4.5 V, I

D

= 1 A

-2132

Gate-Source Charge Q

gs

-1.8-

Gate-Drain Charge

Q

gd

-3.7-

Gate Resistance R

g

V

GS

= -0.1 V, f = 1 MHz - 22 - 

Turn-On Delay Time t

d(on)

V

DD

= -4 V, R

L

= 4 

I

D

 -1 A, V

GEN

= -4.5 V, R

g

= 6 

-1220

ns

Rise Time t

r

-2540

Turn-Off Delay Time t

d(off)

- 260 390

Fall Time t

f

- 155 240

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode

Current

I

S

T

C

= 25 °C - - -2.5

A

Pulse Diode Forward Current I

SM

---25

Body Diode Voltage V

SD

I

S

= -1 A, V

GS

= 0 V - -0.7 -1.1 V

Body Diode Reverse Recovery Time t

rr

I

F

= -1 A, dI/dt = 100 A/μs, T

J

= 25 °C

- 150 250 ns

Body Diode Reverse Recovery Charge Q

rr

- 150 230 nC

Reverse Recovery Fall Time t

a

-57-

ns

Reverse Recovery Rise Time t

b

-93-

Si8429DB

www.vishay.com

Vishay Siliconix

S15-1692-Rev. E, 20-Jul-15

3

Document Number: 74399

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

5

10

15

20

25

0.0 0.5 1.0 1.5 2.0 2.5

V

GS

= 5 thru 2 V

1 V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

1.5 V

( ecnatsiseR-nO -R

)no(SD

)

I

D

- Drain Current (A)

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0 5 10 15 20 25

V

GS

= 2.5 V

V

GS

= 4.5 V

V

GS

= 1.2 V

V

GS

= 1.5 V

V

GS

= 1.8 V

0

1

2

3

4

5

0 5 10 15 20 25

V

DS

= 4 V

I

D

= 1 A

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

0

5

10

15

20

25

0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00

25 °C

T

C

= 125 °C

- 55 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

0

500

1000

1500

2000

2500

012345678

C

rss

C

oss

C

iss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

0.8

0.9

1.0

1.1

1.2

1.3

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 4.5 V, 2.5 V, 1.8 V, 1.5 V

I

D

= 1 A

T

J

- Junction Temperature (°C)

R

DS(on)

-

On-Resistance

(Normalized)

SI8429DB-T1-E1

SI8429DB-T1-E1

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