SI8429DB-T1-E1

Si8429DB
www.vishay.com
Vishay Siliconix
S15-1692-Rev. E, 20-Jul-15
4
Document Number: 74399
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
1.0 1.4
1
10
20
0.0 0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1.2
0.2
0.3
0.4
0.5
0.6
0.7
0.8
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
T
J
- Temperature (°C)
V
GS(th)
(V)
0.02
0.03
0.04
0.05
0.06
0.07
0.08
012345
I
D
= 1 A
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- Drain-to-Source On-Resistance (mΩ)
T
A
= 25 °C
T
A
= 125 °C
0.001
0
40
80
60
10
Time (s)
20
Power (W)
0.01
0.1 1
100 600
100
1
0111.0
0.01
10
- Drain Current (A)I
D
0.1
T
A
= 25 °C
Single Pulse
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
P(t) = 10
DC
I
DM
Limited
I
D(on)
Limited
BV
DSS
Limited
P(t) = 1
P(t) = 0.1
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
Limited by R
DS(on)
*
Si8429DB
www.vishay.com
Vishay Siliconix
S15-1692-Rev. E, 20-Jul-15
5
Document Number: 74399
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating
a
Note
a. The power dissipation P
D
is based on T
J
(max.) = 150 °C, using
junction-to-case thermal resistance, and is more useful in
settling the upper dissipation limit for cases where additional
heatsinking is used. It is used to determine the current rating,
when this rating falls below the package limit.
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74399
.
0
2
4
6
8
10
12
25 50 75 100 125 150
I
D
- Drain Current (A)
T
F
- Foot Temperature (°C)
10
-3
10
-2
01110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Package Information
www.vishay.com
Vishay Siliconix
Revision: 27-Apr-15
1
Document Number: 69378
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MICRO FOOT
®
: 4-Bumps
(1.6 mm x 1.6 mm, 0.8 mm Pitch, 0.290 mm Bump Height)
Notes
1. Bumps are 95.5/3.8/0.7 Sn/Ag/Cu.
2. Backside surface is coated with a Ti/Ni/Ag layer.
3. Non-solder mask defined copper landing pad.
4. Laser marks on the silicon die back.
5. “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined.
6. • is the location of pin 1
Note
Use millimeters as the primary measurement.
DIM.
MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 0.550 0.575 0.600 0.0217 0.0226 0.0236
A1 0.260 0.275 0.290 0.0102 0.0108 0.0114
A2 0.290 0.300 0.310 0.0114 0.0118 0.0122
b 0.370 0.390 0.410 0.0146 0.0153 0.0161
b1 0.300 0.0118
e 0.800 0.0314
s 0.360 0.380 0.400 0.0141 0.0150 0.0157
D 1.520 1.560 1.600 0.0598 0.0614 0.0630
E 1.520 1.560 1.600 0.0598 0.0614 0.0630
K 0.155 0.185 0.215 0.0061 0.0073 0.0085
ECN: T15-0175-Rev. A, 27-Apr-15
DWG: 6038
A2A1
A
4x Ø b1
D
E
S
e
S
SeS
Mark on backside of die
XXXX
G
S
D
D
XXX
Note 5
Recommended land pattern
e
e
4x 0.30 to .31
(Note 3)
Solder mask-0.4
b
K
b1

SI8429DB-T1-E1

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 8.0V 11.7A 6.25W 35mohm @ 4.5V
Lifecycle:
New from this manufacturer.
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