1999 Apr 23 2
NXP Semiconductors Product data sheet
NPN Darlington transistors BSP50; BSP51; BSP52
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
APPLICATIONS
• Industrial high gain amplification.
DESCRIPTION
NPN Darlington transistor in a SOT223 plastic package.
PNP complements: BSP60, BSP61 and BSP62.
PINNING
PIN DESCRIPTION
1 base
2,4 collector
3 emitter
Fig.1 Simplified outline (SOT223) and symbol.
4
123
MAM265
Top view
1
2, 4
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For
other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSP50 − 60 V
BSP51 − 80 V
BSP52 − 90 V
V
CES
collector-emitter voltage V
BE
= 0
BSP50 − 45 V
BSP51 − 60 V
BSP52 − 80 V
V
EBO
emitter-base voltage open collector − 5 V
I
C
collector current (DC) − 1 A
I
CM
peak collector current − 2 A
I
B
base current (DC) − 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 1.25 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
