1999 Apr 23 3
NXP Semiconductors Product data sheet
NPN Darlington transistors BSP50; BSP51; BSP52
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For
other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook“.
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 96 K/W
R
th j-s
thermal resistance from junction to solder point 17 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
collector cut-off current
BSP50 V
BE
= 0; V
CE
= 45 V − − 50 nA
BSP51 V
BE
= 0; V
CE
= 60 V − − 50 nA
BSP52 V
BE
= 0; V
CE
= 80 V − − 50 nA
I
EBO
emitter cut-off current I
C
= 0; V
EB
= 4 V − − 50 nA
h
FE
DC current gain V
CE
= 10 V; note 1; see Fig.2
I
C
= 150 mA 1 000 − −
I
C
= 500 mA 2 000 − −
V
CEsat
collector-emitter saturation
voltage
I
C
= 500 mA; I
B
= 0.5 mA − − 1.3 V
I
C
= 500 mA; I
B
= 0.5 mA;
T
j
= 150 °C
− − 1.3 V
V
BEsat
base-emitter saturation
voltage
I
C
= 500 mA; I
B
= 0.5 mA − − 1.9 V
f
T
transition frequency I
C
= 500 mA; V
CE
= 5 V; f = 100 MHz − 200 − MHz
Switching times (between 10% and 90% levels); see Fig.3
t
on
turn-on time I
Con
= 500 mA; I
Bon
= 0.5 mA;
I
Boff
= −0.5 mA
− 500 − ns
t
off
turn-off time − 1 300 − ns
