OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BTA16-600SWRG

P1-P3P4-P6P7-P9P10-P10
March 2010 Doc ID 7471 Rev 9 1/10
10
BTA16, BTB16
T1610, T1635
16 A Snubberless™, logic level and standard Triacs
Features
■ Medium current Triac
■ Low thermal resistance with clip bonding
■ Low thermal resistance insulation ceramic for
insulated BTA
■ High commutation (4Q) or very high
commutation (3Q) capability
■ BTA series UL1557 certified (File ref: 81734)
■ RoHS ( 2002/95/EC) compliant
■ Insulated tab (BTA series, rated at 2500 V
RMS
)
Applications
■ Snubberless versions (BTA/BTB...W and
T1635) especially recommended for use on
inductive loads, because of their high
commutation performances
■ On/off or phase angle function in applications
such as static relays, light dimmers and
appliance motor speed controllers
Description
Available either in through-hole or surface-mount
packages, the BTA16, BTB16, T1610 and T1635
Triacs series are suitable for general purpose
mains power AC switching.
TM: Snubberless is a trademark of STMicroelectronics
A2
A1
G
D
2
PAK
T1610G
T1635G
TO-220AB
insulated
BTA16
TO-220AB
BTB16
G
A2
A1
G
A2
A2
A1
A2
A2
G
A1
Table 1. Device summary
Symbol Parameter BTA16
(1)
1. Insulated
BTB16 T1610 T1635
I
T(RMS)
On-state rms current 16 16 16 16
V
DRM
/V
RRM
Repetitive peak off-state voltage 600/800 600/800 600/800 600/800
I
GT
(Snubberless) Triggering gate current 35/50 35/50 - 35
I
GT
(logic level) Triggering gate current 10 10 10 -
I
GT
(standard) Triggering gate current 25/50 25/50 - -
www.st.com
Characteristics BTA16, BTB16, T1610, T1635
2/10 Doc ID 7471 Rev 9
1 Characteristics
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current
(full sine wave)
D
2
PAK /
TO-220AB
T
c
= 100 °C
16 A
TO-220AB
insulated
T
c
= 86 °C
I
TSM
Non repetitive surge peak on-state
current
(full cycle, T
j
initial = 25 °C)
F = 50 Hz t = 20 ms 160
A
F = 60 Hz t = 16.7 ms 168
I
²
tI
²
t value for fusing t
p
= 10 ms 144 A
²
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 120 Hz T
j
= 125 °C 50 A/µs
V
DSM
/
V
RSM
Non repetitive surge peak off-state
voltage
t
p
= 10 ms T
j
= 25 °C
V
DRM
/V
RRM
+ 100
V
I
GM
Peak gate current t
p
= 20 µs T
j
= 125 °C 4 A
P
G(AV)
Average gate power dissipation T
j
= 125 °C 1 W
T
stg
Storage temperature range
-40 to + 150
T
j
Maximum operating junction temperature
-40 to + 125
Table 3. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Snubberless and logic level (3 quadrants)
Symbol Test conditions Quadrant T1610 T1635
BTA16 / BTB16
Unit
SW CW BW
I
GT
(1)
1. Minimum IGT is guaranted at 5% of I
GT
max
V
D
= 12 V
R
L
= 33 Ω
I - II - III Max. 10 35 10 35 50 mA
V
GT
I - II - III Max. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ
T
j
= 125 °C
I - II - III Min. 0.2 V
I
H
(2)
2. For both polarities of A2 referenced to A1
I
T
= 500 mA Max. 15 35 15 35 50 mA
I
L
I
G
= 1.2 I
GT
I - III
Max.
25 50 25 50 70
mA
II 30 60 30 60 80
dV/dt
(2)
V
D
= 67 %V
DRM
gate open
T
j
= 125 °C Min. 40 500 40 500 1000 V/µs
(dI/dt)c
(2)
(dV/dt)c = 0.1 V/µs T
j
= 125 °C
Min.
8.5 - 8.5 - -
A/ms(dV/dt)c = 10 V/µs T
j
= 125 °C 3.0 - 3.0 - -
Without snubber T
j
= 125 °C - 8.5 - 8.5 14
BTA16, BTB16, T1610, T1635 Characteristics
Doc ID 7471 Rev 9 3/10
Table 4. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
standard (4 quadrants)
Symbol Test conditions Quadrant
BTA16 / BTB16
Unit
CB
I
GT
(1)
1. Minimum IGT is guaranted at 5% of I
GT
max
V
D
= 12 V R
L
= 33 Ω
I - II - III
IV
Max.
25
50
50
100
mA
V
GT
ALL Max. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 125 °C ALL Min. 0.2 V
I
H
(2)
2. For both polarities of A2 referenced to A1
I
T
= 500 mA Max. 25 50 mA
I
L
I
G
= 1.2 I
GT
I - III - IV
Max.
40 60
mA
II 80 120
dV/dt
(2)
V
D
= 67 %V
DRM
gate open T
j
= 125 °C Min. 200 400 V/µs
(dV/dt)c
(2)
(dI/dt)c = 7 A/ms T
j
= 125 °C Min. 5 10 V/µs
Table 5. Static characteristics
Symbol Test conditions Value Unit
V
T
(2) I
TM
= 22.5 A t
p
= 380 µs T
j
= 25 °C Max. 1.55 V
V
to
(2) Threshold voltage T
j
= 125 °C Max. 0.85 V
R
d
(2) Dynamic resistance T
j
= 125 °C Max. 25 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25 °C
Max.
5µA
T
j
= 125 °C 2 mA
Table 6. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (AC)
D
2
PAK / TO-220AB 1.2
°C/W
TO-220AB insulated 2.1
R
th(j-a)
Junction to ambient
S
(1)
= 1 cm
²
1. S = Copper surface under tab
D
2
PA K 45
°C/W
TO-220AB / TO-220AB
insulated
60
P1-P3P4-P6P7-P9P10-P10

BTA16-600SWRG

Mfr. #:
Buy BTA16-600SWRG
Manufacturer:
STMicroelectronics
Description:
Triacs 16 Amp 600 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet