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Z0109MN,135

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
NXP Semiconductors
Z0109MN
4Q Triac
Z0109MN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 26 August 2013 3 / 15
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage - 600 V
I
T(RMS)
RMS on-state current full sine wave; T
sp
≤ 105 °C; Fig. 1;
Fig. 2; Fig. 3
- 1 A
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- 8 AI
TSM
non-repetitive peak on-state
current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
- 8.5 A
I
2
t
I2t for fusing t
p
= 10 ms; SIN - 0.32
A
2
s
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 0.1 A/µs;
T2+ G+
- 50 A/µs
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 0.1 A/µs;
T2+ G-
- 50 A/µs
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 0.1 A/µs;
T2- G-
- 50 A/µs
dI
T
/dt rate of rise of on-state current
I
T
= 1 A; I
G
= 20 mA; dI
G
/dt = 0.1 A/µs;
T2- G+
- 20 A/µs
I
GM
peak gate current - 1 A
P
GM
peak gate power - 2 W
P
G(AV)
average gate power over any 20 ms period - 0.1 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
NXP Semiconductors
Z0109MN
4Q Triac
Z0109MN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 26 August 2013 4 / 15
003aac269
0
2
4
6
8
10
-2
10
-1
1 10
surge duration (s)
I
T(RMS)
(A)
f = 50 Hz; T
sp
= 105 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
3
a
c
2
7
0
0
0
.
4
0
.
8
1
.
2
-
5
0
0
5
0
1
0
0
1
5
s
(
°
C
)
I
T
(
M
S)
(
A
)
Fig. 2. RMS on-state current as a function of solder
point temperature; maximum values
003aac259
0.
0
0.
4
0.
8
1.
2
1.
6
2.
0
0
0
.
2
0
.
4
0.
6
0.
8
1 1
.
2
I
T
(
RM
S
)
(
A)
P
t
o
t
(
W
)
alpha
=
18
0
°
12
0
°
90
°
60
°
30
°
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
alpha
alpha = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
NXP Semiconductors
Z0109MN
4Q Triac
Z0109MN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 26 August 2013 5 / 15
0
0
3
a
a
d
3
1
8
0
2
4
6
8
1
0
1
1
0
1
0
2
1
0
3
n
u
m
b
e
r
o
f
c
y
c
l
e
s
I
T
S
M
(
A
)
I
TSM
t
I
T
T
j(init)
= 25
°
C max
1/f
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
0
0
3
a
a
d
3
1
9
1
1
0
1
0
2
1
0
3
1
0
-
5
1
0
-
4
1
0
-
3
1
0
-
2
1
0
-
1
t
p
(
s
)
I
T
S
M
(
A)
(
1
)
(
2
)
I
TSM
t
I
T
T
j(init)
= 25
°
C max
t
p
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
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Z0109MN,135

Mfr. #:
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Manufacturer:
WeEn Semiconductors
Description:
Triacs 600V 1A
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