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Z0109MN,135

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
NXP Semiconductors
Z0109MN
4Q Triac
Z0109MN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 26 August 2013 6 / 15
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-sp)
thermal resistance
from junction to solder
point
full cycle; Fig. 8 - - 15 K/W
full cycle; printed circuit board mounted;
minimum footprint; Fig. 6
- 156 - K/WR
th(j-a)
thermal resistance
from junction to
ambient
full cycle; printed circuit board mounted;
pad area; Fig. 7
- 70 - K/W
001aab508
3.8 min
1.5
min
1.5
min
(3×)
2.3
4.6
6.3
1.5
min
All dimensions are in mm
Fig. 6. Minimum footprint SOT223
001aab509
7
4.6
15
36
9
10
18
4.5
60
50
All dimensions are in mm
Printed circuit board:
FR4 epoxy glass (1.6 mm thick), copper laminate
(35 um thick)
Fig. 7. Printed circuit board pad area: SOT223
NXP Semiconductors
Z0109MN
4Q Triac
Z0109MN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 26 August 2013 7 / 15
0
0
3
a
a
c
2
1
0
1
0
-
2
1
0
-
1
1
1
0
1
0
2
1
0
-
5
1
0
-
4
1
0
-
3
1
0
-
2
1
1
0
t
p
(
s
)
Z
t
h
(
j
-
s
p
)
(
K
/
W
)
1
0
-
1
t
p
P
t
Fig. 8. Transient thermal impedance from junction to solder point as a junction of pulse width
NXP Semiconductors
Z0109MN
4Q Triac
Z0109MN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 26 August 2013 8 / 15
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 9
- - 10 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 9
- - 10 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 9
- - 10 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 9
- - 10 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 10
- - 15 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 10
- - 25 mA
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 10
- - 15 mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 10
- - 15 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 11 - - 10 mA
V
T
on-state voltage I
T
= 1.4 A; T
j
= 25 °C; Fig. 12 - 1.3 1.6 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 13
- - 1 VV
GT
gate trigger voltage
V
D
= 600 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 13
0.2 - - V
I
D
off-state current V
D
= 600 V; T
j
= 125 °C - - 0.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 110 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit; Fig. 14
50 - - V/µs
dV
com
/dt rate of change of
commutating voltage
V
D
= 400 V; T
j
= 110 °C; dI
com
/
dt = 0.44 A/ms; gate open circuit
2 - - V/µs
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Z0109MN,135

Mfr. #:
Buy Z0109MN,135
Manufacturer:
WeEn Semiconductors
Description:
Triacs 600V 1A
Lifecycle:
New from this manufacturer.
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