SiA907EDJT
www.vishay.com
Vishay Siliconix
S14-0624-Rev. B, 24-Mar-14
1
Document Number: 67874
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual P-Channel 20 V (D-S) MOSFET
Marking Code: DM
Ordering Information:
SiA907EDJT-T1-GE3
(Lead (Pb)-free and Halogen-free)
SiA907EDJT-T4-GE3
(Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET
®
power MOSFET
• Thermally enhanced Thin PowerPAK
®
SC-70
package
- Small footprint area
- Low on-resistance
• Typical ESD protection: 1500 V HBM
• High speed switching
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Charger Switch, Load Switch for Portable Devices
• Battery Management
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257
). The Thin PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A) Q
g
(TYP.)
-20
0.057 at V
GS
= -4.5 V
-4.5
a
4.9 nC
0.095 at V
GS
= -2.5 V
-4.5
a
PowerPAK
®
SC-70-6L Dual
Top View
2.05 mm
2.05 mm
1
Bottom View
3
D
2
2
G
1
1
S
1
D
1
D
2
S
2
4
G
2
5
D
1
6
P-Channel MOSFET
S
2
D
2
G
2
P-Channel MOSFET
S
1
D
1
G
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
V
DS
-20
V
Gate-Source Voltage
V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
-4.5
a
A
T
C
= 70 °C
-4.5
a
T
A
= 25 °C
-4.5
a, b, c
T
A
= 70 °C
-3.8
b, c
Pulsed Drain Current (t = 300 μs)
I
DM
-15
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
-4.5
a
T
A
= 25 °C
-1.6
b, c
Maximum Power Dissipation
T
C
= 25 °C
P
D
7.8
W
T
C
= 70 °C
5
T
A
= 25 °C
1.9
b, c
T
A
= 70 °C
1.2
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum Junction-to-Ambient
b, f
t ≤ 5 s
R
thJA
52 65
°C/W
Maximum Junction-to-Case (Drain) Steady State
R
thJC
12.5 16
