SIA907EDJT-T1-GE3

SiA907EDJT
www.vishay.com
Vishay Siliconix
S14-0624-Rev. B, 24-Mar-14
4
Document Number: 67874
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
2
4
6
8
10
0 3 6 9 12 15 18
V
GS
- Gate-to-Source Voltage (V)
Q
g
-Total Gate Charge (nC)
V
DS
= 16 V
V
DS
= 10 V
V
DS
= 5 V
I
D
= 4.7 A
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 25 °C
T
J
= 150 °C
0.3
0.4
0.5
0.6
0.7
0.8
0.9
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
-Temperature (°C)
I
D
= 250 μA
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 50 - 25 0 25 50 75 100 125 150
I
D
=3.6A
V
GS
=4.5V
V
GS
= 2.5 V
T
J
- Junction Temperature (°C)
(Normalized)- On-Resistance
R
DS(on)
0.00
0.05
0.10
0.15
0.20
012345
I
D
= 1 A; T
J
=25 °C
I
D
= 1 A; T
J
= 125 °C
I
D
=3.6A;T
J
= 125 °C
I
D
=3.6A;T
J
=25 °C
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
1000
100
1
0.001 0.01 0.1 10
Power (W)
Pulse (s)
20
10
5
15
0
SiA907EDJT
www.vishay.com
Vishay Siliconix
S14-0624-Rev. B, 24-Mar-14
5
Document Number: 67874
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Safe Operating Area, Junction-to-Ambient
Current Derating* Power Derating
* The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0.01
0.1
1
10
100
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
10 s
100 μs
100 ms
Limited by R
DS(on)
*
1 ms
T
Single Pulse
A
= 25 °C
BVDSS Limited
10 ms
1 s
DC
0
2
4
6
8
10
12
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
-Case Temperature (°C)
Package Limited
0
2
4
6
8
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
SiA907EDJT
www.vishay.com
Vishay Siliconix
S14-0624-Rev. B, 24-Mar-14
6
Document Number: 67874
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67874
.
1
0.1
0.01
Normalized Effective Transient
Thermal Impedance
10
-3
10
-2
1 10 100010
-1
10
-4
100
Square Wave Pulse Duration (s)
Single Pulse
0.02
0.05
0.1
0.2
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 110 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
-3
10
-2
10
-1
10
-4
1
0.01
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0.05

SIA907EDJT-T1-GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 12V Vgs Thin PowerPAK SC-70
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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