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VS-FC220SA20

P1-P3P4-P6P7-P9P10-P10
VS-FC220SA20
www.vishay.com
Vishay Semiconductors
Revision: 01-Jun16
1
Document Number: 94846
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SOT-227 Power Module
Single Switch - Power MOSFET, 220 A
FEATURES
• Enhanced body diode dV/dt and dI
F
/dt capability
• Improved gate avalanche and dynamic dV/dt
ruggedness
• Fully characterized capacitance and avalanche SOA
• Fully isolated package
• Easy to use and parallel
• Low on-resistance
• Simple drive requirements
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High efficiency synchronous rectification SMPS
• Uninterruptible power supply
• High speed power switching
• Hard switched and high frequency circuits
DESCRIPTION
This generation of power MOSFETs from Vishay
Semiconductors provide the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SOT-227 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 400 W to 700 W. The low thermal
resistance of the SOT-227 contribute to its wide acceptance
throughout the industry.
Notes
(1)
Maximum continuous drain current at V
GS
10 V must be limited to 100 A to do not exceed the maximum temperature of power terminals.
(2)
Repetitive rating; pulse width limited by maximum junction temperature.
(3)
Limited by T
J
max., starting T
J
= 25 °C, L = 0.23 mH, R
g
= 25 , I
AS
= 102 A, V
GS
= 10 V. Part not recommended for use above this value.
(4)
Repetitive rating; pulse width limited by maximum junction temperature starting T
J
= 25 °C, L = 0.23 mH, R
g
= 25
, V
GS
= 10 V, duty cycle 1 %.
PRODUCT SUMMARY
V
DSS
200 V
R
DS(on)
0.0048
I
D
220 A
Type Modules - MOSFET
Package SOT-227
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
MOSFET
Drain to source voltage V
DSS
200 V
Continuous drain current at V
GS
10 V I
D
(1)
T
C
= 25 °C 220
AT
C
= 100 °C 158
Pulsed drain current I
DM
(2)
520
Power dissipation P
D
T
C
= 25 °C 789
W
T
C
= 100 °C 395
Gate to source voltage V
GS
± 30 V
Single pulse avalanche energy E
AS
(3)
1200 mJ
Avalanche current I
AR
(4)
70 A
Repetitive avalanche energy E
AR
(4)
600 mJ
MODULE
Operating junction temperature range T
J
-55 to +175
°C
Operating storage temperature range T
Stg
-55 to +175
Insulation withstand voltage (AC-RMS) V
ISOL
2.5 kV
VS-FC220SA20
www.vishay.com
Vishay Semiconductors
Revision: 01-Jun16
2
Document Number: 94846
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction and storage temperature range T
J
, T
Stg
-55 - 175 °C
Junction to case R
thJC
- - 0.19
°C/W
Case to heatsink R
thCS
Flat, greased surface - 0.05 -
Weight -30 - g
Mounting torque
Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.3 (11.5) Nm (lbf.in)
Case style SOT-227
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Drain to source breakdown voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 1.0 mA 200 - - V
Breakdown voltage temperature coefficient V
(BR)DSS
/T
J
Reference to 25 °C, I
D
= 1.0 mA - 0.21 - V/°C
Static drain to source on-resistance R
DS(on)
(1)
V
GS
= 10 V, I
D
= 150 A - 4.8 7.0 m
Gate threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 500 μA 3 4 5.1
V
V
DS
= V
GS
, I
D
= 500 μA, T
J
= 125 °C - 2.5 -
Forward transconductance g
fs
V
DS
= 20 V, I
D
= 150 A - 385 - S
Gate resistance, internal R
g
-2-
Drain to source leakage current I
DSS
V
DS
= 200 V, V
GS
= 0 V - 1 50
μA
V
DS
= 200 V, V
GS
= 0 V, T
J
= 125 °C - 40 1000
V
DS
= 200 V, V
GS
= 0 V, T
J
= 175 °C - 2 10 mA
Gate to source forward leakage
I
GSS
V
GS
= 20 V - - 250
nA
Gate to source reverse leakage V
GS
= -20 V - - -250
Total gate charge Q
g
I
D
= 150 A,
V
DS
= 100 V,
V
GS
= 10 V,
see fig.15 and fig.19
(1)
-350-
nC
Gate to source charge Q
gs
-120-
Gate to drain ("Miller") charge Q
gd
-110-
Turn-on delay time t
d(on)
V
DD
= 120 V,
I
D
= 150 A,
R
g
= 5,
L = 500 μH,
diode used: 20CZU02
-360-
ns
Rise time t
r
-245-
Turn-off delay time t
d(off)
-205-
Fall time t
f
-220-
Turn-on delay time t
d(on)
V
DD
= 120 V,
I
D
= 150 A,
R
g
= 5,
L = 500 μH,
T
J
= 125 °C,
diode used: 20CZU02
-350-
ns
Rise time t
r
-243-
Turn-off delay time t
d(off)
-210-
Fall time t
f
-175-
Internal source inductance L
S
Between lead, and center of die contact - 5 - nH
Input capacitance C
iss
V
GS
= 0 V,
V
DS
= 50 V,
f = 1.0 MHz,
see fig.14
- 21 000 -
pF
Output capacitance C
oss
- 1600 -
Reverse transfer capacitance C
rss
-320-
Drain to case capacitance C
d-cs
V
GS
= 0 V, (G-S shortened); f = 1 MHz - 43 -
VS-FC220SA20
www.vishay.com
Vishay Semiconductors
Revision: 01-Jun16
3
Document Number: 94846
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature.
(2)
Pulse width 300 μs, duty cycle 2 %
Fig. 1 - Maximum DC MOSFET Drain-Source Current vs.
Case Temperature
Fig. 2 - Typical Drain-to-Source Current Output Characteristics,
V
GS
= 10 V
Fig. 3 - Typical Drain-to-Source Current Output Characteristics,
at T
J
= 25 °C
Fig. 4 - Typical Drain-to-Source Current Output Characteristics,
at T
J
= 125 °C
SOURCE-DRAIN RATINGS AND CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Continuous source current (body diode) I
S
MOSFET symbol showing the integral
reverse p-n junction diode
--220
A
Pulsed source current (body diode) I
SM
(1)
--520
Diode forward voltage V
SD
(2)
T
J
= 25 °C, I
S
= 150 A, V
GS
= 0 V - 0.87 1.0
VT
J
= 125 °C, I
S
= 150 A, V
GS
= 0 V - 0.75 -
T
J
= 175 °C, I
S
= 150 A, V
GS
= 0 V - 0.70 -
Reverse recovery time t
rr
T
J
= 25 °C, I
F
= 50 A, dI
F
/dt = 100 A/μs,
V
R
= 100 V
(2)
- 170 - ns
Reverse recovery current I
rr
-12- A
Reverse recovery charge Q
rr
- 1060 - nC
Reverse recovery time t
rr
T
J
= 125 °C, I
F
= 50 A, dI
F
/dt = 100 A/μs,
V
R
= 100 V
(2)
- 200 - ns
Reverse recovery current I
rr
-15- A
Reverse recovery charge Q
rr
- 1550 - nC
Forward turn-on time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD)
I
DS
-
Continuous Drain-Source Current (A)
Allowable Case Temperature (°C)
0
20
40
60
80
100
120
140
160
180
0 50 100 150 200 250
DC
V
DS
-
Drain-to-Source Voltage (V), at V
GS
= 10 V
0.1
1
10
100
0.01 0.10 1.00 10.00
I
DS
- Drain-to-Source current (A)
T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
0
25
50
75
100
125
150
175
200
225
250
275
300
0 0.5 1 1.5 2
I
DS
-Drain-to-Source to Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 6 V
V
GS
= 7 V
V
GS
= 8 V
V
GS
= 10 V
V
GS
= 12 V
V
GS
= 15 V
0
25
50
75
100
125
150
175
200
225
250
275
300
0 0.5 1 1.5 2 2.5 3 3.5
V
GS
= 6 V
V
GS
= 7 V
V
GS
= 8 V
V
GS
= 10 V
V
GS
= 12 V
V
GS
= 15 V
I
DS
-Drain-to-Source to Current (A)
V
DS
- Drain-to-Source Voltage (V)
P1-P3P4-P6P7-P9P10-P10

VS-FC220SA20

Mfr. #:
Buy VS-FC220SA20
Manufacturer:
Vishay Semiconductors
Description:
Discrete Semiconductor Modules Output & SW Modules - SOT-227
Lifecycle:
New from this manufacturer.
Delivery:
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