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NTLJS1102PTAG

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 0
1 Publication Order Number:
NTLJS1102P/D
NTLJS1102P
Power MOSFET
−8 V, −8.1 A, mCOOL] Single P−Channel,
2x2 mm, WDFN package
Features
• WDFN Package with Exposed Drain Pad for Excellent Thermal
Conduction
• Lowest RDS(on) in 2 x 2 mm Package
• 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate
Drive
• 2 x 2 mm Footprint Same as SC−88 Package
• Low Profile (<0.8 mm) for Easy Fit in Thin Environments
• This is a Halide−Free Device
• This is a Pb−Free Device
Applications
• High Side Load Switch
• Li Ion Battery Linear Mode Charging
• Optimized for Battery and Load Management Applications in
Portable Equipment
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
−8 V
Gate−to−Source Voltage V
GS
± 6 V
Continuous
Drain Current
(Note 1)
Steady
State
T
A
= 25°C
I
D
−6.2
A
T
A
= 85°C −4.5
t v 5 s T
A
= 25°C −8.1
Power
Dissipation
(Note 1)
Steady
State
T
A
= 25°C
P
D
1.9
W
t v 5 s 3.3
Continuous
Drain Current
(Note 2)
Steady
State
T
A
= 25°C
I
D
−3.7
A
T
A
= 85°C −2.7
Power
Dissipation
(Note 2)
T
A
= 25°C P
D
0.7 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
−30 A
Operating Junction and Storage
Temperature
T
J
, T
STG
−55 to
150
°C
Source Current (Body Diode) (Note 2) I
S
−5.5 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 30 mm
2
[2 oz] including traces).
http://onsemi.com
−8.0 V
45 mW @ −2.5 V
36 mW @ −4.5 V
R
DS(on)
MAX
−3.0 A
I
D
MAXV
(BR)DSS
68 mW @ −1.8 V
90 mW @ −1.5 V
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
G
S
P−CHANNEL MOSFET
D
J6 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
J6MG
G
1
2
3
6
5
4
WDFN6
CASE 506AP
MARKING
DIAGRAM
1
2
3
6
5
4
D
D
G
D
D
S
(Top View)
PIN CONNECTIONS
D
S
S
D
Pin 1
300 mW @ −1.2 V
−5.5 A
−6.2 A
−1.0 A
−0.2 A
NTLJS1102P
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State (Note 3)
R
q
JA
65
°C/W
Junction−to−Ambient – t v 5 s (Note 3)
R
q
JA
38
Junction−to−Ambient – Steady State min Pad (Note 4)
R
q
JA
180
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 30 mm
2
[2 oz] including traces).
MOSFET ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−8.0 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= −250 mA, Ref to 25°C
−7.2 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= −8V
T
J
= 25°C −1.0 mA
T
J
= 85°C −10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±6V ±0.1
mA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−0.29 −0.72 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
2.7 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= −4.5 V, I
D
= −6.2 A 25 36 mW
V
GS
= −4.5 V, I
D
= −3.0 A 25 36
V
GS
= −2.5 V, I
D
= −5.5 A 34 45
V
GS
= −2.5 V, I
D
= −3.0 A 34 45
V
GS
= −1.8 V, I
D
= −3.0 A 45 68
V
GS
= −1.5 V, I
D
= −1.0 A 55 90
V
GS
= −1.2 V, I
D
= −0.2 A 80 300
Forward Transconductance g
FS
V
DS
= −4 V, I
D
= −6.2 A 14.3 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= −4 V
1585
pF
Output Capacitance C
OSS
350
Reverse Transfer Capacitance C
RSS
185
Total Gate Charge Q
G(TOT)
V
GS
= −4.5 V, V
DS
= − 4 V;
I
D
= −6.2 A
15.7 25
nC
Threshold Gate Charge Q
G(TH)
0.8
Gate−to−Source Charge Q
GS
1.9
Gate−to−Drain Charge Q
GD
3.3
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V (Note 6)
Turn−On Delay Time t
D(ON)
V
GS
= −4.5 V, V
DS
= −4 V,
I
D
= −6.2 A, R
G
= 1 W
8.0
ns
Rise Time t
r
41
Turn−Off Delay Time t
d(OFF)
80
Fall Time t
f
70
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
NTLJS1102P
http://onsemi.com
3
MOSFET ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V (Note 6)
Turn−On Delay Time t
D(ON)
V
GS
= −4.5 V, V
DS
= −4 V,
I
D
= −8.1 A, R
G
= 1 W
8.0
ns
Rise Time t
r
19
Turn−Off Delay Time t
d(OFF)
78
Fall Time t
f
50
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V,
I
S
= −1.0 A
T
J
= 25°C −0.6 −1.0
V
T
J
= 85°C −0.58
Reverse Recovery Time t
RR
V
GS
= 0 V, d
ISD
/d
t
= 100 A/ms,
I
S
= −1.0 A
55 85
ns
Charge Time t
a
18
Discharge Time t
b
37
Reverse Recovery Charge Q
RR
39 nC
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
ORDERING INFORMATION
Device Package Shipping
†
NTLJS1102PTBG WDFN6
(Pb−Free)
3000 / Tape & Reel
NTLJS1102PTAG WDFN6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
P1-P3P4-P6P7-P7

NTLJS1102PTAG

Mfr. #:
Buy NTLJS1102PTAG
Manufacturer:
ON Semiconductor
Description:
MOSFET P-CH 8V 3.7A 6-WDFN
Lifecycle:
New from this manufacturer.
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