NTLJS1102PTAG

NTLJS1102P
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAINTOSOURCE VOLTAGE (V) V
GS
, GATETOSOURCE VOLTAGE (V)
4.53.53.02.52.01.00.50
0
5
10
15
20
25
30
2.251.751.51.00.750.50.250
0
5
10
15
20
25
30
Figure 3. OnResistance vs. GatetoSource
Voltage
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
V
GS
, GATE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
4.03.02.52.01.51.00.50
0
0.02
0.06
0.08
0.10
0.14
0.16
0.20
201612840
0
0.02
0.04
0.06
0.12
0.14
0.18
0.20
Figure 5. OnResistance Variation with
Temperature
Figure 6. DraintoSource Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAINTOSOURCE VOLTAGE (V)
12510075502502550
0.7
0.8
0.9
1.0
1.2
1.3
1.4
1.5
87654321
100
1,000
10,000
100,000
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
R
DS(on)
, NORMALIZED DRAINTO
SOURCE RESISTANCE (W)
I
DSS
, LEAKAGE (nA)
1.5 4.0 5.0
V
GS
= 1.2 V
1.5 V
1.8 V
2.0 V
2.5 V
4.5 V
1.25 2.0 2.5
V
DS
= 5 V
T
J
= 25°C
T
J
= 125°C
T
J
= 55°C
3.5 4.5
0.04
0.12
0.18
T
J
= 25°C
I
D
= 0.2 A
I
D
= 6.2 A
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
0.08
0.10
0.16
V
GS
= 4.5 V
1.8 V
T
J
= 25°C
1.2 V 1.5 V
2.5 V
150
1.1
V
GS
= 4.5 V
I
D
= 6.2 A
T
J
= 125°C
T
J
= 150°C
T
J
= 85°C
18141062
NTLJS1102P
http://onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
V
DS
, DRAINTOSOURCE VOLTAGE (V) Q
G
, TOTAL GATE CHARGE (nC)
76543210
0
200
400
1000
1400
1600
2000
2400
14121086420
0
1
2
3
4
5
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCETODRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.80.70.60.50.40.30.2
0.1
1
10
Figure 11. Threshold Voltage Figure 12. Single Pulse Maximum Power
Dissipation
T
J
, TEMPERATURE (°C) SINGLE PULSE TIME (s)
12510075502502550
0
0.1
0.2
0.3
0.4
0.6
0.7
0.8
1E+001E011E021E03
0
10
20
30
40
50
C, CAPACITANCE (pF)
V
GS
, GATETOSOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
V
GS(th)
(V)
POWER (W)
600
800
1200
1800
2200
C
iss
C
oss
C
rss
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
16
Q
T
Q
GS
Q
GD
V
GS
V
DS
V
DS
= 4 V
I
D
= 6.2 A
T
J
= 25°C
V
DS
, DRAINTOSOURCE VOLTAGE (V)
0
1
2
3
4
5
V
GS
= 4.5 V
V
DD
= 4 V
I
D
= 6.2 A
t
d(off)
t
d(on)
t
f
t
r
1.0
T
J
= 25°C
T
J
= 125°C
T
J
= 55°C
T
J
= 150°C
150
0.5
I
D
= 250 mA
1E+01 1E+02 1E+03
8
NTLJS1102P
http://onsemi.com
6
TYPICAL CHARACTERISTICS
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAINTOSOURCE VOLTAGE (V)
1001010.1
0.1
1
10
100
Figure 14. FET Thermal Response
t, TIME (s)
1E011E021E031E04
0.01
0.1
1
I
D
, DRAIN CURRENT (A)
R(t), EFFECTIVE TRANSIENT
THERMAL RESPONSE (NORMALIZED)
1E+00 1E+01 1E+02 1E+03
Duty Cycle = 0.5
Single Pulse
R
q
JA
= 65°C/W
0.05
0.1
0.2
V
GS
= 6 V
Single Pulse
T
C
= 25°C
100 ms
1 ms
10 ms
dc
R
DS(on)
Limit
Thermal Limit
Package Limit

NTLJS1102PTAG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET P-CH 8V 3.7A 6-WDFN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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