NTLJS1102P
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) −V
GS
, GATE−TO−SOURCE VOLTAGE (V)
4.53.53.02.52.01.00.50
0
5
10
15
20
25
30
2.251.751.51.00.750.50.250
0
5
10
15
20
25
30
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−V
GS
, GATE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
4.03.02.52.01.51.00.50
0
0.02
0.06
0.08
0.10
0.14
0.16
0.20
201612840
0
0.02
0.04
0.06
0.12
0.14
0.18
0.20
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.7
0.8
0.9
1.0
1.2
1.3
1.4
1.5
87654321
100
1,000
10,000
100,000
−I
D
, DRAIN CURRENT (A)
−I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
I
DSS
, LEAKAGE (nA)
1.5 4.0 5.0
V
GS
= −1.2 V
−1.5 V
−1.8 V
−2.0 V
−2.5 V
−4.5 V
1.25 2.0 2.5
V
DS
= −5 V
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
3.5 4.5
0.04
0.12
0.18
T
J
= 25°C
I
D
= −0.2 A
I
D
= −6.2 A
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.08
0.10
0.16
V
GS
= −4.5 V
−1.8 V
T
J
= 25°C
−1.2 V −1.5 V
−2.5 V
150
1.1
V
GS
= −4.5 V
I
D
= −6.2 A
T
J
= 125°C
T
J
= 150°C
T
J
= 85°C
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