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AU5780AD,118

P1-P3P4-P6P7-P9P10-P12
Philips Semiconductors Product data
AU5780ASAE/J1850/VPW transceiver
2001 Jun 19
7
SYMBOL UNITMAX.TYP.MIN.CONDITIONSPARAMETER
– I
BO.LK.HO
BUS_OUT leakage current; TX high; bus low or
operational
–17 < V
BUS
< 8.5 V;
TX = high;
0 V < V
BATT
< 24 V
–10 I
BO.LIM
µA
– I
BO.LK.HH
BUS_OUT leakage current; TX high; bus positive 8.5 V < V
BUS
< 17 V;
TX = high;
0 V < V
BATT
< 24 V
–10 10 µA
– I
BO.LK
BUS_OUT leakage current; TX low; bus positive TX low; 0V<V
BATT
<24V;
0.1V< V
bus
<+17V
–10 +10 µA
– I
BO.N
BUS_OUT leakage current; TX low; bus negative TX low; 0.1V<V
BATT
<24V;
–17V< V
bus
< 0V
–10 +100 µA
– I
BO.LOG
BUS_OUT leakage current with loss of ground –17 V < V
BUS
< 17 V;
0 V <V
BATT
< 1 V
–10 100 µA
C
BUSOUT
Bus output capacitance 20 pF
Pin BUS_IN
V
ih
Input high voltage 4.1 V
V
il
Input low voltage 3.65 V
V
h
Input hysteresis 100 mV
I
BIN
Input bias current –17V < V
bus
< +17V –5 +5 µA
I
BIN(MAX)
BUS_IN input current maximum with and without
loss of ground
–17 < V
BUS
< 17 V;
0 V < V
BATT
< 24 V;
VTX high or low
–100 100 µA
C
BUSIN
, Bus input capacitance 10 20 pF
T
DRXON
,
t
DRXOFF
Bus line to RX propagation delay, normal and 4X
modes
Measured at V
BUSIN_HIGH
or V
BUSIN_LOW
to RX;
6 < V
BATT
< 24 V; of
R
LOAD
= 10 KW to 5 V
0.4 1.7
ms
Philips Semiconductors Product data
AU5780ASAE/J1850/VPW transceiver
2001 Jun 19
8
DYNAMIC CHARACTERISTICS
–40°C < T
amb
< +125°C; 9V < V
BATT
< 16V; V
/LB
> 3V; 0V <V
BUS
< +8.5V;
R
S
= 56.2 kW; R
d
= 10 kW; R
f
= 15 kW; R
b
= 10W; BUS_OUT: 300W < R
L
< 1.6 kW;
1.7 ms < (R
L
* C
L
) < 5.2 ms; 2.2 nF < C
L
< 16.55 nF; R
X
: C
L
< 40pF; unless otherwise specified.
SYMBOL
PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Pins TX, RX, /LB
t
pI
Delay TX to RX rising and falling edge in
loop-back mode
/LB low
6 V < V
BATT
< 24 V
15 24 µs
t
dIb
Delay /LB to BUS_OUT TX high, toggle /LB 1 10 µs
Pin BUS_OUT
t
bo
Delay TX to BUS_OUT, normal battery Measured at 3.875V, Note 3 13 21 µs
t
bo_hibatt
Delay TX to BUS_OUT, high battery Measured at 3.875V,
16V < V
BATT
< 24V, Note 3
13 21 µs
t
bo_lobatt
Delay TX to BUS_OUT, low battery Measured at 3.875V,
6V < V
BATT
< 9V, Note 3
13 22 µs
t
r
, t
f
BUS_OUT transition times, rise and fall, normal
battery
Measured between
1.5 V and (V
BATT
– 2.75 V),
9 < V
BATT
< 16 V,
t
r
tested at an additional bus load
of R
LOAD
= 400 W and
C
LOAD
= 22000 pF
11 18 µs
t
r_hibatt
,
t
f_hibatt
BUS_OUT transition times, rise and fall, high
battery
Measured between
1.5 V and 6.25 V,
16 < V
BATT
< 24 V,
t
r
tested at an additional bus load
of R
LOAD
= 400 W and
C
LOAD
= 22000 pF
11 18 µs
t
r_lobatt
,
t
f_lobatt
BUS_OUT transition times, rise and fall, low
battery
Measured between
1.5 V and 6.25 V,
6 < V
BATT
< 9 V,
t
r
tested at an additional bus load
of R
LOAD
= 400 W and
C
LOAD
= 22000 pF
(V
BATT
– 4.25)
/ 0.43
(V
BATT
– 4.25)
/ 0.264
µs
I
sr
Bus output current slew rate
6V < V
BATT
< 16V; R
S
= 56.2 kW
R
L
= 100W; measured at 30% and
70% of waveform, DC offset
0 to –2V
0.90 2.4 mA/µs
V
dB_limit
Bus emissions voltage output 0 V < DC_offset < 1 V,
9 V < V
BATT
< 24 V,
R
L
= 500 W, C
L
= 6 nF
–50 dBV
V
dB_limit–1
Bus emissions voltage output, negative bus
offset
–1 V < DC_offset < 0 V,
9 V < V
BATT
< 24 V,
R
L
= 500 W, C
L
= 6 nF
–50 dBV
N
R
Bus noise rejection from battery 30 Hz < f < 250kHz 20 dB
N
I
Bus noise isolation from battery 250 kHz < f < 200 MHz 17 dB
Philips Semiconductors Product data
AU5780ASAE/J1850/VPW transceiver
2001 Jun 19
9
SYMBOL UNITMAX.TYP.MIN.CONDITIONSPARAMETER
Pin BUS_IN
C
BIN
Bus Input capacitance 10 20 pF
T
DRXON
;
t
DRXOFF
Bus line to RX propagation delay, normal and
4x modes
Measured at V
BUSIN_HIGH
or
V
BUSIN_LOW
to RX;
6 < V
BATT
< 24 V; of
R
LOAD
= 10 kW to 5V
0.4 1.7 µs
T
DRX_
∆
Bus line to RX propagation delay mismatch,
normal and 4x modes
t
DRXOFF
–t
DRXON
–1.3 +1.3 µs
Pin BATT
t
low_power
time-out to low power state TX low 1 4 ms
NOTES;
1. TX < 0.9V for more than 4 ms
2. For 6V < V
BATT
< 9V the bus output voltage is limited by the supply voltage.
For 16V < V
BATT
< 24V (jump start) the load is limited by the package power dissipation
ratings; the duration of this condition is recommended to be less than 90 seconds.
3. Tested with a bus load of R
LOAD
= 400 W and C
LOAD
= 22,000 pF.
P1-P3P4-P6P7-P9P10-P12

AU5780AD,118

Mfr. #:
Buy AU5780AD,118
Manufacturer:
NXP Semiconductors
Description:
IC TXRX SAE/J1850 VPW 8SOIC
Lifecycle:
New from this manufacturer.
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