8701I Data Sheet
©2016 Integrated Device Technology, Inc Revision C January 22, 20164
TABLE 4A. POWER SUPPLY DC CHARACTERISTICS, V
DD
= 3.3V±5%, V
DDO
= 3.3V±5% OR 2.5V±5%, TA = -40°C TO 85°C
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
DD
Positive Supply Voltage 3.135 3.3 3.465 V
V
DDO
Output Supply Voltage
3.135 3.3 3.465 V
2.375 2.5 2.625 V
I
DD
Power Supply Current 100 mA
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V
DD
4.6V
Inputs, V
I
-0.5V to V
DD
+ 0.5 V
Outputs, V
O
-0.5V to V
DDO
+ 0.5V
Package Thermal Impedance, θ
JA
47.9°C/W (0 lfpm)
Storage Temperature, T
STG
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifi cations only. Functional
operation of product at these conditions or any conditions
beyond those listed in the DC Characteristics or AC Charac-
teristics is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect product reliability.
8701I Data Sheet
©2016 Integrated Device Technology, Inc Revision C January 22, 20165
TABLE 4B. LVCMOS DC CHARACTERISTICS, V
DD
= 3.3V±5%, V
DDO
= 3.3V±5% OR 2.5V±5%, TA = 0°C TO 70°C
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
IH
Input
High Voltage
DIV_SELA, DIV_SELB,
DIV_SELC, DIV_SELD,
BANK_EN0, BANK_EN1,
nMR/OE
2V
DD
+ 0.3 V
CLK 2 V
DD
+ 0.3 V
V
IL
Input
Low Voltage
DIV_SELA, DIV_SELB,
DIV_SELC, DIV_SELD,
BANK_EN0, BANK_EN1,
nMR/OE
-0.3 0.8 V
CLK -0.3 1.3 V
I
IH
Input
High Current
DIV_SELA, DIV_SELB,
DIV_SELC, DIV_SELD,
BANK_EN0, BANK_EN1,
nMR/OE
V
DD
=
VIN
= 3.465V 5 µA
CLK V
DD
=
VIN
= 3.465V 150 µA
I
IL
Input
Low Current
DIV_SELA, DIV_SELB,
DIV_SELC, DIV_SELD,
BANK_EN0, BANK_EN1,
nMR/OE
V
DD
= 3.465V,
VIN
= 0V -150 µA
CLK V
DD
= 3.465V,
VIN
= 0V -5 µA
V
OH
Output High Voltage
V
DD
= V
DDO
= 3.135V
I
OH
= -36mA
2.6 V
V
DD
= 3.135V,
V
DDO
= 2.375
I
OH
= -27mA
1.8 V
V
OL
Output Low Voltage
V
DD
= V
DDO
= 3.135V
I
OL
= 36mA
0.5 V
V
DD
= 3.135V,
V
DDO
= 2.375
I
OL
= 27mA
0.5 V
8701I Data Sheet
©2016 Integrated Device Technology, Inc Revision C January 22, 20166
TABLE 5A. AC CHARACTERISTICS, V
DD
= V
DDO
= 3.3V±5%, TA = -40°C TO 85°C
Symbol Parameter Test Conditions Minimum Typical Maximum Units
f
MAX
Input Frequency 250 MHz
tp
LH
Propagation Delay,
Low-to-High; NOTE 1
0MHz f 200MHz
2.2 3.6 ns
tp
HL
Propagation Delay,
High-to-Low; NOTE 1
0MHz f 200MHz 2.2 3.6 ns
tsk(b) Bank Skew; NOTE 2, 7
Measured on rising edge
at V
DDO
/2
200 ps
tsk(o) Output Skew; NOTE 3, 7
Measured on rising edge
at V
DDO
/2
250 ps
tsk(w)
Multiple Frequency Skew;
NOTE 4, 7
Measured on rising edge
at V
DDO
/2
300 ps
tsk(pp)
Part to Part Skew;
NOTE 5, 7
Measured on rising edge
at V
DDO
/2
600 ps
t
R
Output Rise Time; NOTE 6 30% to 70% 200 900 ps
t
F
Output Fall Time; NOTE 6 30% to 70% 200 900 ps
t
PW
Output Pulse Width
0MHz f 200MHz
tCYCLE/2 - 0.6 tCYCLE/2 tCYCLE/2 + 0.6 ns
f = 200MHz 1.9 2.5 3.1 ns
t
EN
Output Enable Time;
NOTE 6
f = 10MHz 6 ns
t
DIS
Output Disable Time;
NOTE 6
f = 10MHz 6 ns
All parameters measured at 200MHz unless noted otherwise.
NOTE 1: Measured from the V
DD
input crossing point to the output at
V
DDO
/2.
NOTE 2: Defi ned as skew within a bank of outputs at the same supply voltages and with equal load conditions.
NOTE 3: Defi ned as skew between outputs at the same supply voltages and with equal load conditions.
NOTE 4 Defi ned as skew across banks of outputs operating at different frequency with the same supply voltages
and equal load conditions.
NOTE 5: Defi ned as skew between outputs on different devices operating at the same supply voltages and
with equal load conditions. Using the same type of inputs on each device, the outputs are measured at V
DDO
/2.
NOTE 6: These parameters are guaranteed by characterization. Not tested in production.
NOTE 7: This parameter is defi ned in accordance with JEDEC Standard 65.

8701CYILFT

Mfr. #:
Manufacturer:
IDT
Description:
Clock Generators & Support Products 20 LVCMOS OUT BUFFER/DIVIDER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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