74HC05_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 9 July 2012 6 of 15
NXP Semiconductors
74HC05-Q100
Hex inverter with open-drain outputs
10. Dynamic characteristics
[1] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N + (0.5 C
L
V
O
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
V
O
= output voltage in V (output HIGH);
V
CC
= supply voltage in V;
N = number of inputs switching;
R
L
= load resistance in M;
C
L
= load capacitance in pF;
Table 7. Dynamic characteristics
GND = 0 V; for test circuit see Figure 7.
Symbol Parameter Conditions 25 C 40 C to +125 C Unit
Min Typ Max Max
(85 C)
Max
(125 C)
t
PLZ
LOW to OFF-state
propagation delay
nA to nY; see Figure 6
V
CC
= 2.0 V - 20 90 115 135 ns
V
CC
= 4.5 V - 11 18 23 27 ns
V
CC
= 6.0 V - 10 15 20 23 ns
t
PZL
OFF-state to LOW
propagation delay
nA to nY; see Figure 6
V
CC
= 2.0 V - 22 90 115 135 ns
V
CC
= 4.5 V - 9 18 23 27 ns
V
CC
= 6.0 V - 8 15 20 23 ns
t
THL
HIGH to LOW
output transition
time
see Figure 6
V
CC
= 2.0 V - 18 75 95 110 ns
V
CC
= 4.5 V - 6 15 19 22 ns
V
CC
= 6.0 V - 5 13 16 19 ns
C
PD
power dissipation
capacitance
per inverter; V
I
=GNDtoV
CC
;
V
CC
= 5.0 V
[1]
-4- - -pF
