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SI5857DU-T1-E3

P1-P3P4-P6P7-P9P10-P10
www.vishay.com
4
Document Number: 73696
S09-2111-Rev. D, 12-Oct-09
Vishay Siliconix
Si5857DU
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
= 1.5 V
V
GS
= 2 V
V
GS
= 2.5 V
V
GS
= 3.5 V
V
GS
= 4 V
V
GS
= 4.5 V
V
GS
= 3 V
V
GS
= 5 V
I
D
- Drain Current (A)
R
DS(on)
- On-Resistance (Ω)
0.04
0.08
0.12
0.16
0.20
048 12 16 20
V
GS
= 4.5 V
V
GS
= 2.5 V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0
2
4
6
8
10
02468 10 12
I
D
= 5.1 A
V
DS
= 10 V
V
DS
= 16 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
100
200
300
400
500
600
700
800
02468 10 12 14 16 18 20
C
iss
C
oss
C
rss
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 3.6 A
Document Number: 73696
S09-2111-Rev. D, 12-Oct-09
www.vishay.com
5
Vishay Siliconix
Si5857DU
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
10
T
J
= 25 °C
T
J
= 150 °C
20
T
J
- Temperature ( °C)
V
GS(th)
(V)
0.7
0.8
0.9
1.0
1.1
1.2
1.3
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
0.04
0.06
0.08
0.10
0.12
0.14
0.16
2.0 2.5 3.0 3.5 4.0 4.5 5.0
I
D
= 3.6 A
T
A
= 25 °C
T
A
= 125 °C
Power (W)
Time (s)
0
5
10
15
20
25
30
000110.10.010.001
10 100
Safe Operating Area, Junction-to-Case
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)I
D
100
1
0.1 1 10 100
0.01
10
0.1
T
A
= 25 °C
Single Pulse
10 s
DC
10 ms
100 ms
1 ms
I
D(on)
limited
IDM limited
BVDSS limited
Limited by R
DS(on)
*
100 µs
1 s
www.vishay.com
6
Document Number: 73696
S09-2111-Rev. D, 12-Oct-09
Vishay Siliconix
Si5857DU
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
I
D
- Drain Current (A)
T
C
- Case Temperature ( )°C
0
2
4
6
8
10
12
0 25 50 75 100 125 150
Package Limited
Power Derating
T
C
- Case Temperature (°C)
Power Dissipation (W)
0
2
4
6
8
10
12
25 50 75 100 125 150
P1-P3P4-P6P7-P9P10-P10

SI5857DU-T1-E3

Mfr. #:
Buy SI5857DU-T1-E3
Manufacturer:
Vishay
Description:
MOSFET P-CH 20V 6A PPAK CHIPFET
Lifecycle:
New from this manufacturer.
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