SI5857DU-T1-E3

Document Number: 73696
S09-2111-Rev. D, 12-Oct-09
www.vishay.com
7
Vishay Siliconix
Si5857DU
MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
10
-3
10
-2
100001110
-1
10
-4
100
0.2
0.1
0.05
0.02
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 87 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
1
0.01
1
Single Pulse
0.02
0.05
0.1
0.2
10
-3
10
-2
10
-1
10
-4
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Document Number: 73696
S09-2111-Rev. D, 12-Oct-09
Vishay Siliconix
Si5857DU
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Reverse Current vs. Junction Temperature
T
J
- Junction Temperature (°C)
- Reverse Current (mA)I
R
- 50 - 25 0 25 50 75 100 125 150
0.0001
0.01
0.1
1
10
100
0.001
20 V
10 V
Forward Voltage Drop
V
F
- Forward Voltage Drop (V)
- Forward Current (A)I
F
0.5 0.60 0.1 0.2 0.3 0.4
T
J
= 25 °C
T
J
= 150 °C
0.1
1
10
Capacitance
- Junction Capacitance (pF)
V
KA
- Reverse Voltage (V)
C
T
0
100
200
300
400
500
600
048 12 16 20
Document Number: 73696
S09-2111-Rev. D, 12-Oct-09
www.vishay.com
9
Vishay Siliconix
Si5857DU
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73696
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
000101110
-1
10
-4
100
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
0.2
0.1
0.05
Single Pulse
Duty Cycle = 0.5
1
0.1
0.01
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 93 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
01110
-1
10
-4
1
0.1
0.01
Square Wave Pulse Duration (s)
Normalized Effective
Transient
Thermal Impedance
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5

SI5857DU-T1-E3

Mfr. #:
Manufacturer:
Vishay
Description:
MOSFET P-CH 20V 6A PPAK CHIPFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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