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VS-20ETF06FP-M3

P1-P3P4-P6P7-P8
VS-20ETF02FP-M3, VS-20ETF04FP-M3, VS-20ETF06FP-M3
www.vishay.com
Vishay Semiconductors
Revision: 15-Sep-17
1
Document Number: 96296
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
• Glass passivated pellet chip junction
• 150 °C max. operation junction temperature
• Designed and qualified according to
JEDEC
®
-JESD 47
• Fully isolated package (V
INS
= 2500 V
RMS
)
• UL pending
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-20ETF0..FP... fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
PRIMARY CHARACTERISTICS
I
F(AV)
20 A
V
R
200 V, 400 V, 600 V
V
F
at I
F
1.3 V
I
FSM
300 A
t
rr
60 ns
T
J
max. 150 °C
Snap factor 0.6
Package 2L TO-220 FullPAK
Circuit configuration Single
2
Anode
1
Cathode
2L TO-220 FullPAK
2
1
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Sinusoidal waveform 20 A
V
RRM
200 to 600 V
I
FSM
300 A
V
F
10 A, T
J
= 25 °C 1.2 V
t
rr
1 A, 100 A/μs 60 ns
T
J
-40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-20ETF02FP-M3 200 300
5VS-20ETF04FP-M3 400 500
VS-20ETF06FP-M3 600 700
VS-20ETF02FP-M3, VS-20ETF04FP-M3, VS-20ETF06FP-M3
www.vishay.com
Vishay Semiconductors
Revision: 15-Sep-17
2
Document Number: 96296
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 51 °C, 180° conduction half sine wave 20
A
Maximum peak one cycle non-repetitive
surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 250
10 ms sine pulse, no voltage reapplied 300
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 316
A
2
s
10 ms sine pulse, no voltage reapplied 442
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A
2
s
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
20 A, T
J
= 25 °C 1.30
V
60 A, T
J
= 25 °C 1.67
Forward slope resistance r
t
T
J
= 150 °C 12.5 m
Threshold voltage V
F(TO)
T
J
= 150 °C 0.9 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.1
mA
T
J
= 150 °C 5.0
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
rr
I
F
at 20 A
pk
100 A/μs
25 °C
160 ns
Reverse recovery current I
rr
10 A
Reverse recovery charge Q
rr
1.25 μC
Snap factor S Typical 0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-40 to +150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 2.5
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
62
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth, and greased 0.5
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style 2L TO-220 FullPAK
20ETF02FP
20ETF04FP
20ETF06FP
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
t
a
t
b
VS-20ETF02FP-M3, VS-20ETF04FP-M3, VS-20ETF06FP-M3
www.vishay.com
Vishay Semiconductors
Revision: 15-Sep-17
3
Document Number: 96296
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
0 4 8 12 16 20
0
40
80
120
160
30°
60°
90°
120°
180°
Average On-State Current (A)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Average Forward Current (A)
0 5 10 15 20 25 30 35
0
50
100
150
30°
60°
180°
DC
120°
90°
10
0
35
0
Maximum Average ForwardPower Loss (W)
Average Forward Current (A)
20
20
25
25
15
10 155
5
30
180°
120°
90°
60°
30°
T
J
= 150 °C
Conduction angle
RMS limit
Ø
10
0
45
0
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
25
25
35
35
15
10 15
40
520
30
180°
120°
90°
60°
30°
DC
RMS limit
Ø
Conduction period
T
J
= 150 °C
30
20
5
300
50
1 10 100
Peak Half Sine Wave Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
200
100
150
250
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
400
150
50
0.001 0.01 1
Peak Half Sine Wave Forward Current (A)
Pulse Train Duration (s)
300
100
200
250
350
550
Maximum non-repetitive surge current
vs. pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
0.1
450
500
P1-P3P4-P6P7-P8

VS-20ETF06FP-M3

Mfr. #:
Buy VS-20ETF06FP-M3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers New Input Diodes - FULLPAK-220-e3
Lifecycle:
New from this manufacturer.
Delivery:
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