VS-20ETF02FP-M3, VS-20ETF04FP-M3, VS-20ETF06FP-M3
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Vishay Semiconductors
Revision: 15-Sep-17
4
Document Number: 96296
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Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
1000
10
1
012 5
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
100
34
T
J
= 25 °C
T
J
= 150 °C
20ETF.. Series
0.20
0.15
0
0 200 400 600 800 1000
t
rr
- Typical Reverse Recovery Time (µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.05
0.10
T
J
= 25 °C
I
FM
= 1 A
I
FM
= 5 A
I
FM
= 10 A
I
FM
= 20 A
I
FM
= 30 A
10
0
35
0
Maximum Average ForwardPower Loss (W)
Average Forward Current (A)
20
20
25
25
15
10 155
5
30
180°
120°
90°
60°
30°
T
J
= 150 °C
Conduction angle
RMS limit
Ø
4.0
0
0 200 400 600 800 1000
Q
rr
- Typical Reverse Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
0.5
2.0
1.0
3.0
T
J
= 25 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
1.5
2.5
3.5
10
3
0
0 200 400 600 800 1000
Q
rr
- Typical Reverse Recovery Charge (µC)
dI/dt - Rate of Fall of Forward Current (A/µs)
1
2
4
T
J
= 150 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
5
6
7
8
9
70
30
0
0 200 400 600 800 1000
I
rr
- Typical Reverse Recovery Current (A)
dI/dt - Rate of Fall of Forward Current (A/µs)
10
20
40
T
J
= 25 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
50
60
