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NGTB20N120LWG

P1-P3P4-P6P7-P9
NGTB20N120LWG
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Typical Gate Charge Figure 8. Energy Loss vs. Temperature
Q
G
, GATE CHARGE (nC) T
J
, JUNCTION TEMPERATURE (°C)
150100500
0
2
4
6
8
12
14
16
140120100806040200
0
0.5
1.0
1.5
2.0
2.5
4.5
Figure 9. Switching Time vs. Temperature Figure 10. Energy Loss vs. I
C
T
J
, JUNCTION TEMPERATURE (°C) I
C
, COLLECTOR CURRENT (A)
140120100806040200
1
10
100
1000
282420128
0
1
3
5
6
10
Figure 11. Switching Time vs. I
C
Figure 12. Energy Loss vs. R
G
I
C
, COLLECTOR CURRENT (A)
R
G
, GATE RESISTOR (W)
32282420128
1
10
100
1000
756555453525155
0
1
3
5
6
8
9
V
GE
, GATE−EMITTER VOLTAGE (V)
SWITCHING ENERGY (mJ)
SWITCHING TIME (ns)
SWITCHING ENERGY (mJ)
SWITCHING TIME (ns)
ENERGY (mJ)
250
10
160
V
CE
= 600 V
V
GE
= 15 V
I
C
= 20 A
R
G
= 10 W
200 V
400 V
600 V
160
t
f
t
d(off)
32 40
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
R
G
= 10 W
36
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
R
G
= 10 W
V
CE
= 600 V
V
GE
= 15 V
I
C
= 20 A
T
J
= 150°C
85
3.0
3.5
4.0
200
8
44 52
40 52
2
4
7
E
off
E
on
V
CE
= 600 V
V
GE
= 15 V
I
C
= 20 A
R
G
= 10 W
t
r
t
d(on)
E
off
E
on
16 36 48
2
4
7
9
t
f
t
d(off)
t
r
t
d(on)
16 44 48
E
off
E
on
NGTB20N120LWG
http://onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 13. Switching Time vs. R
G
Figure 14. Energy Loss vs. V
CE
R
G
, GATE RESISTOR (W)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
756555453525155
1
100
1000
10,000
725675625575525475425375
0
1
2
4
5
7
Figure 15. Switching Time vs. V
CE
Figure 16. Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
725675625575525475425375
1
10
100
1000
Figure 17. Reverse Bias Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING TIME (ns)
SWITCHING ENERGY (mJ)
SWITCHING TIME (ns)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
85
V
CE
= 600 V
V
GE
= 15 V
I
C
= 20 A
T
J
= 150°C
775
3
V
GE
= 15 V
I
C
= 20 A
R
G
= 10 W
T
J
= 150°C
775
6
t
f
t
d(off)
t
r
t
d(on)
V
GE
= 15 V
I
C
= 20 A
R
G
= 10 W
T
J
= 150°C
10
E
off
E
on
t
f
t
d(off)
t
r
t
d(on)
1000100101
0.01
0.1
1
10
100
1000
50 ms
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse T
C
= 25°C
Curves must be derated
linearly with increase
in temperature
1000100101
1
10
100
1000
V
GE
= 15 V, T
C
= 125°C
NGTB20N120LWG
http://onsemi.com
6
TYPICAL CHARACTERISTICS
0.001
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
R
q
JC
= 0.65
Junction
Case
C
1
C
2
R
1
R
2
R
n
C
i
= t
i
/R
i
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
C
n
t
i
(sec)
1.0E−4
1.76E−4
0.002
0.1
2.0
R
i
(°C/W)
0.02659
0.06231
0.10246
0.2121
0.1057
Figure 18. IGBT Transient Thermal Impedance
THERMAL RESPONSE (Z
q
JC
)
Figure 19. Diode Transient Thermal Impedance
PULSE TIME (sec)
THERMAL RESPONSE (Z
q
JC
)
PULSE TIME (sec)
1000100100.10.010.0010.00010.000001
0.001
0.1
1
10
10.00001
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
R
q
JC
= 1.5
0.01
Junction
C
1
C
2
R
1
R
2
C
i
= t
i
/R
i
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
R
i
(°C/W)
t
i
(sec)
1.48E−4
0.002
0.03
0.19655
0.414
0.5
Case
C
n
R
n
0.1
2.0
0.345
0.0934
Figure 20. Test Circuit for Switching Characteristics
P1-P3P4-P6P7-P9

NGTB20N120LWG

Mfr. #:
Buy NGTB20N120LWG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 1200V/20A IGBT FSI TO-247
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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