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FDMS4D0N12C

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2013
March, 2018 − Rev. 0
1 Publication Order Number:
FDMS4D0N12C/D
FDMS4D0N12C
Power MOSFET
120 V, 4.0 mW, 118 A, Single N−Channel,
PQFN56
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
DS(on)
to Minimize Conduction Losses
• Low Q
G
and Capacitance to Minimize Driver Losses
• These are Pb−free, Halogen Free / BFR Free and are RoHS
Compliant
Typical Applications
• Synchronous Rectification
• AC−DC and DC−DC Power Supplies
• AC−DC Adapters (USB PD) SR
• Load Switch
MAXIMUM RATINGS (T
A
= 25°C, Unless otherwise specified)
Parameter Symbol Value Unit
Drain−to−Source Voltage
V
DSS
120 V
Gate−to−Source Voltage
V
GS
±20 V
Continuous Drain
Current R
θ
JC
(Note 7)
Steady
State
T
C
= 25°C
I
D
114 A
Power Dissipation
R
θ
JC
(Note 2)
P
D
106 W
Continuous Drain
Current R
θ
JA
(Note 6, 7)
Steady
State
T
A
= 25°C
I
D
18.5 A
Power Dissipation
R
θ
JA
(Note 6, 7)
P
D
2.7 W
Pulsed Drain
Current
T
A
= 25°C, t
p
= 10 μs
I
DM
628 A
Operating Junction and Storage
Temperature
T
J
, T
stg
−55 to
+150
°C
Source Current (Body Diode)
I
S
114 A
Single Pulse Drain−to−Source Avalanche
Energy (I
AV
= 66.7 A, L = 0.1 mH)
E
AS
222 mJ
Lead Temperature Soldering Reflow for
Soldering Purposes
(1/8” from case for 10 s)
T
L
300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Power 56
(PQFN8 5x6)
CASE 483AF
See detailed ordering and shipping information on page 2 o
f
this data sheet.
ORDERING INFORMATION
www.onsemi.com
N-Channel MOSFET
MARKING DIAGRAM
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FDMS4D0N12C = Specific Device Code
$Y&Z&3&K
FDMS
4D0N12C
ELECTRICAL CONNECTION
V
(BR)DDS
I
D
MAX R
DS(on)
MAX
120 V
67 A 4.0 mΩ @ 10 V
33 A 8.0 mΩ @ 6 V
FDMS4D0N12C
www.onsemi.com
2
ORDERING INFORMATION
Device Package Shipping†
FDMS4D0N12C PQFN8 (Power 56)
(Pb−Free)
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction*to*Case – Steady State (Note 7)
RqJC
1.18
°C/W
Junction*to*Ambient – Steady State (Note 7)
RqJA
45
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Symbol
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF CHARACTERISTICS
Drain*to*Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
120
V
Drain*to*Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/ T
J
I
D
= 250 mA, ref to 25°C
49
mV/°C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 96 V
T
J
= 25°C
1
mA
T
J
= 125°C
100
mA
Gate*to*Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
±100
nA
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 370 A
2.0 4.0
V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
I
D
= 250 mA, ref to 25°C
−8.5
mV/°C
Drain*to*Source On Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 67 A 3.3 4.0
mΩ
V
GS
= 6 V, I
D
= 33 A 4.7 8.0
Forward Transconductance
g
FS
V
DS
= 5 V, I
D
= 67 A
144
S
Gate−Resistance
R
G
T
A
= 25°C
0.9
1.8 Ω
CHARGES & CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz,
V
DS
= 60 V
4565 6460
pF
Output Capacitance
C
OSS
2045 3060
Reverse Transfer Capacitance
C
RSS
17 24
Total Gate Charge
Q
G(TOT)
V
GS
= 6 V, V
DS
= 60 V,
I
D
= 67 A
36 51
nC
Total Gate Charge
Q
G(TOT)
V
GS
= 10 V, V
DS
= 60 V,
I
D
= 67 A
58 82
Gate−to−Source Charge
Q
GS
21
Gate−to−Drain Charge
Q
GD
9
Plateau Voltage
V
GP
5 V
Output Charge
Q
OSS
V
DD
= 60 V, V
GS
= 0 V 207 nC
FDMS4D0N12C
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Symbol UnitMaxTypMin
Symbol
Test Conditions
Parameter
SWITCHING CHARACTERISTICS (Note 8)
Turn*On Delay Time
td
(ON)
V
GS
= 10 V, V
DS
= 60 V,
I
D
= 67 A, R
G
= 6 W
25
41
ns
Rise Time t
r
8
16
Turn*Off Delay Time
t
D(OFF)
45
72
Fall Time t
f
12
22
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 67 A
T
J
= 25°C
0.86 1.3
V
T
J
= 125°C
0.7 1.2
Reverse Recovery Time
t
RR
V
GS
= 0 V,
dI
S
/dt = 300 A/ms,
I
S
= 33 A
53
84
ns
Reverse Recovery Charge
Q
RR
175
280
nC
Reverse Recovery Time
t
RR
V
GS
= 0 V,
dI
S
/dt = 1000 A/ms,
I
S
= 33 A
36 57
ns
Reverse Recovery Charge
Q
RR
360 575
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
q
JA
is determined with the device mounted on a 1 in
2
pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
q
CA
is determined
by the user’s board design.
45°C/W when mounted on
a 1 in
2
pad of 2 oz copper.
a) 115°C/W when mounted on
a minimum pad of 2 oz copper.
b)
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E
AS
of 222 mJ is based on starting T
J
= 25_C; L = 0.1 mH, I
AS
= 66.7 A, V
DD
= 100 V, V
GS
= 12 V, 100% tested at L = 0.1 mH, I
AS
= 66.7 A.
4. Pulsed I
D
please refer to Fig. 11 SOA graph for more details.
5. Computed continuous current limited to max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.
6. Surface−mounted on FR4 board using 1 in2 pad size, 2 oz Cu pad.
7. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
8. Switching characteristics are independent of operating junction temperatures.
P1-P3P4-P6P7-P7

FDMS4D0N12C

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Manufacturer:
ON Semiconductor
Description:
MOSFET PTNG 120V N-FET 118A
Lifecycle:
New from this manufacturer.
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