FDMS4D0N12C
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4
TYPICAL CHARACTERISTICS
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation
0
50
100
150
200
0.0 0.5 1.0 1.5 2.0
V
GS
= 10 V
8 V
6 V
5 V
0
10
20
30
45678910
I
D
= 67 A
T
J
= 125°C
T
J
= 25°C
I
D
, Drain Current (A)
R
DS(ON)
, ON−Resistance (mΩ)
V
DS
, Drain−Source Voltage (V) V
GS
, Gate to Source Voltage (V)
3.0 4.0 5.0 6.0 7.0
0
50
100
150
200
V
DS
= 5 V
T
J
= 150°C
25°C
−55°C
I
D
, Drain Current (A)
V
GS
, Gate to Source Voltage (V)
0.0
1.0
2.0
3.0
4.0
5.0
0 50 100 150 200
R
DS(ON)
, ON−Resistance (mΩ)
I
D
, Drain Current (A)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
−75 −50 −25 0 25 50 75 100 125 150
R
DS(ON)
, ON−Resistance (mΩ)
T
J
, Junction Temperature (°C)
1
10
100
1000
10000
0.1 1 10 100
I
D
= 67 A
V
GS
= 10 V
Capacitance (pF)
V
DS
, Drain to Source Voltage (V)
f = 1 MHz
V
GS
= 0 V
f = 1 MHz
V
GS
= 0 V
C
rss
C
oss
C
iss
V
GS
= 10 V
8 V
6 V
5 V
