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Document Number: 72064
S09-0869-Rev. D, 18-May-09
Vishay Siliconix
Si4834BDY
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
MOSFET SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ.
a
Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
0.8 3.0 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
Ch-1 100
µA
Ch-2 1
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 °C
Ch-1 2000
Ch-2 15
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
20 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 7.5 A
0.017 0.022
Ω
V
GS
= 4.5 V, I
D
= 6.5 A
0.024 0.030
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 7.5 A
19 S
Diode Forward Voltage
b
V
SD
I
S
= 1 A, V
GS
= 0 V
Ch-1 0.47 0.5
V
Ch-2 0.75 1.2
Dynamic
a
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 7.5 A
711
nCGate-Source Charge
Q
gs
2.9
Gate-Drain Charge
Q
gd
2.5
Gate Resistance
R
g
0.5 1.5 2.6 Ω
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 15 V, R
L
= 15 Ω
I
D
≅ 1 A, V
GEN
= 10 V, R
g
= 6 Ω
915
ns
Rise Time
t
r
10 17
Turn-Off Delay Time
t
d(off)
19 30
Fall Time
t
f
915
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.7 A, dI/dt = 100 A/µs
Ch-1 32 55
Ch-2 35 55
SCHOTTKY SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Forward Voltage Drop
V
F
I
F
= 1.0 A
0.47 0.50
V
I
F
= 1.0 A, T
J
= 125 °C
0.36 0.42
Maximum Reverse Leakage Current
I
rm
V
R
= 30 V
0.004 0.100
mA
V
R
= 30 V, T
J
= 100 °C
0.7 10
V
R
= - 30 V, T
J
= 125 °C
3.0 20
Junction Capacitance
C
T
V
R
= 10 V
50 pF