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SI4834BDY-T1-GE3

P1-P3P4-P6P7-P9P10-P10
www.vishay.com
4
Document Number: 72064
S09-0869-Rev. D, 18-May-09
Vishay Siliconix
Si4834BDY
MOSFET TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
20
10
0.1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
T
J
= 25 °C
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0246810
I
D
= 7.5 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
60
100
20
40
Power (W)
Time (s)
80
11010
-
1
10
-
2
10
-
3
Safe Operating Area, Junction-to-Foot
100
1
0.1 1 10 100
0.01
10
100 ms
0.1
T
C
= 25 °C
Single Pulse
1 s
10 s
DC
10 ms
1 ms
Limited by R
DS(on)
*
V
DS
- Drain-to-Source Voltage (V)
* V
DS
> minimum V
GS
at which R
DS(on)
is specified
I
D
- Drain Current (A)
Document Number: 72064
S09-0869-Rev. D, 18-May-09
www.vishay.com
5
Vishay Siliconix
Si4834BDY
MOSFET TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-
3
10
-
2
1 10 60010
-
1
10
-
4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 93 °C/W
3. T
JM
-
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-
3
10
-
2
11010
-
1
10
-
4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
www.vishay.com
6
Document Number: 72064
S09-0869-Rev. D, 18-May-09
Vishay Siliconix
Si4834BDY
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72064
.
Reverse Current vs. Junction Temperature
0 25 50 75 100 125 150
20
10
0.0001
- Reverse Current (mA)I
R
T
J
- Temperature (°C)
30 V
24 V
0.001
0.01
0.1
1
Forward Voltage Drop
0.0 0.3 0.6 0.9 1.2 1.5
10
1
- Forward Current (A)I
F
V
F
- Forward Voltage Drop (V)
T
J
= 150 °C
T
J
= 25 °C
Capacitance
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
40
80
120
160
200
0 6 12 18 24 30
C
oss
P1-P3P4-P6P7-P9P10-P10

SI4834BDY-T1-GE3

Mfr. #:
Buy SI4834BDY-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET 2N-CH 30V 5.7A 8-SOIC
Lifecycle:
New from this manufacturer.
Delivery:
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