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NCP5351D
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
NCP5351
http://onsemi.com
10
TYPICAL PERFORMANCE CHARACTERISTICS
Conditions: V
S
= 5.0 V
;
Room T
emperature; DRN = 0 V
.
Figure 9. Bottom Gate Sourcing Current into 0.108
Figure 10. Bottom Gate Sourcing
Figure 1
1. T
op Gate Sourcing Current into 0.108
Figure 12. T
op Gate Sourcing
0
0
CO
BG
+5.0 V
0 V
Input
Pulse
50 ns
+5.0 V
0 V
Input
Pulse
50 ns
0
0
CO
TG
Conditions: BST − DRN = 5.0 V
;
Room T
emperature; DRN = 0 V
.
V
S
BST
PGND
DRN
EN
CO
TG
BG
NCP5351
+5.0 V
R1
1.0 k
Measurement
R2*
0.108
*Applied after power up and input.
C4
100 nF
C3
100 nF
C2
1.0
F
C1
1.0
F
+
−
V
S
BST
PGND
DRN
EN
CO
TG
BG
NCP5351
+5.0 V
R1
1.0 k
Measurement
R2*
0.108
*Applied after power up and input.
C4
100 nF
C3
100 nF
C2
1.0
F
C1
1.0
F
+
−
NCP5351
http://onsemi.com
11
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 13. Nonoverlap T
est Configuration
V
S
PGND
EN
CO
BST
TG
DRN
BG
NCP5351
+5.0 V
Measurements
C3
100 nF
C1
10
F
Input
Pulse
+
−
R1
1.0 k
C2
10
F
R2
50
C4
100 nF
+
−
Gated
Pulse
Burst (2)
tpdh
BG
(non−overlap)
tpdh
TG
(non−overlap)
DRN
CO
TG
BG
tpdl
BG
tpdl
TG
4.0 V
Conditions: V
S
= 5.0 V
; BST − DRN = 5.0 V
; C
LOAD
= 5.7 nF;
Room T
emperature.
Figure 14. T
op Gate Rise Time
Figure 15. T
op Gate Fall Time
Conditions: V
S
= 5.0 V
; BST − DRN = 5.0 V
; C
LOAD
= 5.7 nF;
Room T
emperature.
NCP5351
http://onsemi.com
12
TYPICAL PERFORMANCE CHARACTERISTICS
Conditions: V
S
= 5.0 V
; BST − DRN = 5.0 V
; C
LOAD
= 5.7 nF;
Room T
emperature.
Figure 16. Bottom Gate Fall Time
Figure 17. Bottom Gate Rise Time
Conditions: V
S
= 5.0 V
; BST − DRN = 5.0 V
; C
LOAD
= 5.7 nF;
Room T
emperature.
Figure 18. Bottom Gate and T
op Gate Rise/Fall Time T
est
V
S
BST
PGND
DRN
EN
CO
TG
BG
NCP5351
+5.0 V
Measurements
C4
5.7 nF
C3
5.7 nF
C2
100 nF
C1
100 nF
+5.0 V
0 V
Input
Pulse
60 ns
+
−
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
NCP5351D
Mfr. #:
Buy NCP5351D
Manufacturer:
ON Semiconductor
Description:
Gate Drivers 5V 4A Dual MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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