NCP5351
http://onsemi.com
10
TYPICAL PERFORMANCE CHARACTERISTICS
Conditions: V
S
= 5.0 V;
Room Temperature; DRN = 0 V.
Figure 9. Bottom Gate Sourcing Current into 0.108
Figure 10. Bottom Gate Sourcing
Figure 11. Top Gate Sourcing Current into 0.108
Figure 12. Top Gate Sourcing
0
0
CO
BG
+5.0 V
0 V
Input
Pulse
50 ns
+5.0 V
0 V
Input
Pulse
50 ns
0
0
CO
TG
Conditions: BST − DRN = 5.0 V;
Room Temperature; DRN = 0 V.
V
S
BST
PGND DRN
EN
CO
TG
BG
NCP5351
+5.0 V
R1
1.0 k
Measurement
R2*
0.108
*Applied after power up and input.
C4
100 nF
C3
100 nF
C2
1.0 F
C1
1.0 F
+
V
S
BST
PGND DRN
EN
CO
TG
BG
NCP5351
+5.0 V
R1
1.0 k
Measurement
R2*
0.108
*Applied after power up and input.
C4
100 nF
C3
100 nF
C2
1.0 F
C1
1.0 F
+
NCP5351
http://onsemi.com
11
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 13. Nonoverlap Test Configuration
V
S
PGND
EN
CO
BST
TG
DRN
BG
NCP5351
+5.0 V
Measurements
C3
100 nF
C1
10 F
Input
Pulse
+
R1
1.0 k
C2
10 F
R2
50
C4
100 nF
+
Gated
Pulse
Burst (2)
tpdh
BG
(non−overlap)
tpdh
TG
(non−overlap)
DRN
CO
TG
BG
tpdl
BG
tpdl
TG
4.0 V
Conditions: V
S
= 5.0 V; BST − DRN = 5.0 V; C
LOAD
= 5.7 nF;
Room Temperature.
Figure 14. Top Gate Rise Time Figure 15. Top Gate Fall Time
Conditions: V
S
= 5.0 V; BST − DRN = 5.0 V; C
LOAD
= 5.7 nF;
Room Temperature.
NCP5351
http://onsemi.com
12
TYPICAL PERFORMANCE CHARACTERISTICS
Conditions: V
S
= 5.0 V; BST − DRN = 5.0 V; C
LOAD
= 5.7 nF;
Room Temperature.
Figure 16. Bottom Gate Fall Time Figure 17. Bottom Gate Rise Time
Conditions: V
S
= 5.0 V; BST − DRN = 5.0 V; C
LOAD
= 5.7 nF;
Room Temperature.
Figure 18. Bottom Gate and Top Gate Rise/Fall Time Test
V
S
BST
PGND DRN
EN
CO
TG
BG
NCP5351
+5.0 V
Measurements
C4
5.7 nF
C3
5.7 nF
C2
100 nF
C1
100 nF
+5.0 V
0 V
Input
Pulse
60 ns
+

NCP5351D

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Gate Drivers 5V 4A Dual MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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