NCP5351
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4
MAXIMUM RATINGS − SO−8
Rating Value Unit
Operating Junction Temperature, T
J
Internally Limited °C
Package Thermal Resistance: SO−8
Junction−to−Case, R
JC
Junction−to−Ambient, R
JA
45
165
°C/W
°C/W
Storage Temperature Range, T
S
−65 to 150 °C
Lead Temperature Soldering: Reflow: (SMD styles only) (Note 1)
Pb−Free
230 peak
260 peak
°C
MSL Rating 1
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
NOTE: This device is ESD sensitive. Use standard ESD precautions when handling.
1. 60 seconds maximum above 183°C.
MAXIMUM RATINGS − DFN−10
Rating Symbol Value Unit
Maximum Voltage All Pins V
max
5.5 V
Maximum Operating Voltage All Pins V
max
5.2 V
Thermal Resistance, Junction−to−Air R
JA
68.5 °C/W
Operating Ambient Temperature Range T
A
−30 to 85 °C
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 2)
V
ESD
> 2500
> 150
V
Moisture Sensitivity MSL Level 1
Storage Temperature Range T
stg
−55 to 150 °C
Junction Operating Temperature T
J
−30 to 125 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
2. This device series contains ESD protection and exceeds the following tests:
Human Body Model, 100 pF discharge through a 1.5 k following specification JESD22/A114.
Machine Model, 200 pF discharged through all pins following specification JESD22/A115.
Latchup as per JESD78 Class II: > 100 mA.
MAXIMUM RATINGS
Pin Symbol Pin Name V
MAX
V
MIN
I
SOURCE
I
SINK
V
S
Main Supply Voltage Input 6.3 V −0.3 V NA 4.0 A Peak (< 100 s)
250 mA DC
BST Bootstrap Supply Voltage
Input
25 V wrt/PGND
6.3 V wrt/DRN
−0.3 V wrt/DRN NA 4.0 A Peak (< 100 s)
250 mA DC
DRN Switching Node
(Bootstrap Supply Return)
25 V −1.0 V DC
−5.0 V for 100 ns
−6.0 V for 20 ns
4.0 A Peak (< 100 s)
250 mA DC
NA
TG High−Side Driver Output
(Top Gate)
25 V wrt/PGND
6.3 V wrt/DRN
−0.3 V wrt/DRN 4.0 A Peak (< 100 s)
250 mA DC
4.0 A Peak (< 100 s)
250 mA DC
BG Low−Side Driver Output
(Bottom Gate)
6.3 V −0.3 V 4.0 A Peak (< 100 s)
250 mA DC
4.0 A Peak (< 100 s)
250 mA DC
CO TG & BG Control Input 6.3 V −0.3 V 1.0 mA 1.0 mA
EN Enable Input 6.3 V −0.3 V 1.0 mA 1.0 mA
PGND Ground 0 V 0 V 4.0 A Peak (< 100 s)
250 mA DC
NA
NOTE: All voltages are with respect to PGND except where noted.
NCP5351
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5
ELECTRICAL CHARACTERISTICS (0°C < T
J
< 125°C; V
S
= 5.0 V; 4.0 V < V
BST
< 25 V; V
EN
= V
S
; unless otherwise noted)
Parameter
Test Conditions Min Typ Max Unit
DC OPERATING SPECIFICATIONS
POWER SUPPLY
V
S
Quiescent Current, Operating V
CO
= 0 V, 4.5 V; No output switching 1.0 mA
V
BST
Quiescent Current, Operat-
ing
V
CO
= 0 V, 4.5 V; No output switching 50 A
Quiescent Current, Non−Operat-
ing
V
EN
= 0 V; V
CO
= 0 V, 4.5 V 25 A
Undervoltage Lockout
Start Threshold
CO = 0 V 4.05 4.25 4.48 V
Hysteresis CO = 0 V 275 mV
CO INPUT CHARACTERISTICS
High Threshold
2.0 V
Low Threshold 0.8 V
Input Bias Current 0 < V
CO
< V
S
0 1.0 A
EN INPUT CHARACTERISTICS
High Threshold
Both outputs respond to CO 2.0 V
Low Threshold Both outputs are low, independent of CO 0.8 V
Input Bias Current 0 < V
EN
< V
S
0 10 A
THERMAL SHUTDOWN
Overtemperature Trip Point
170 °C
Hysteresis 30 °C
HIGH−SIDE DRIVER
Peak Output Current
4.0 A
Output Resistance (Sourcing) Duty Cycle < 2.0%, Pulse Width < 100 s, T
J
= 125°C,
V
BST
− V
DRN
= 4.5 V, V
TG
= 4.0 V + V
DRN
0.5
Output Resistance (Sinking) Duty Cycle < 2.0%, Pulse Width < 100 s,
T
J
= 125°C, V
BST
− V
DRN
= 4.5 V, V
TG
= 0.5 V + V
DRN
0.42
LOW−SIDE DRIVER
Peak Output Current
4.0 A
Output Resistance (Sourcing) Duty Cycle < 2.0%, Pulse Width < 100 s, T
J
= 125°C,
V
S
= 4.5 V, V
BG
= 4.0 V
0.6
Output Resistance (Sinking) Duty Cycle < 2.0%, Pulse Width < 100 s, T
J
= 125°C,
V
S
= 4.5 V, V
BG
= 0.5 V
0.42
NCP5351
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6
ELECTRICAL CHARACTERISTICS (continued) (0°C < T
J
< 125°C; V
S
= 5.0 V; 4.0 V < V
BST
< 25 V; V
EN
= V
S
, C
LOAD
= 5.7 nF;
unless otherwise noted.)
Parameter
Test Conditions Min Typ Max Unit
AC OPERATING SPECIFICATIONS
HIGH−SIDE DRIVER
Rise Time V
BST
− V
DRN
= 5.0 V, T
J
= 125°C 8.0 16 ns
Fall Time V
BST
− V
DRN
= 5.0 V, T
J
= 125°C 14 21 ns
Propagation Delay Time,
TG Going High (Nonoverlap Time)
V
BST
− V
DRN
= 5.0 V, T
J
= 125°C 30 45 60 ns
Propagation Delay Time,
TG Going Low
V
BST
− V
DRN
= 5.0 V, T
J
= 125°C 18 37 ns
LOW−SIDE DRIVER
Rise Time
T
J
= 125°C 10 15 ns
Fall Time T
J
= 125°C 12 20 ns
Propagation Delay Time,
BG Going High (Non−Overlap
Time)
T
J
= 125°C 25 55 80 ns
Propagation Delay Time,
BG Going Low
T
J
= 125°C 10 18 ns
UNDERVOLTAGE LOCKOUT
V
S
Rising EN = V
S
, CO = 0 V, dV
S
/dt > 1.0 V/s, from 4.0 V to
4.5 V, time to BG > 1.0 V, T
J
= 125°C
30 s
V
S
Falling EN = V
S
, CO = 0 V, dV
S
/dt < −1.0 V/s, from 4.5 V to
4.0 V, time to BG < 1.0 V, T
J
= 125°C
500 s

NCP5351D

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Gate Drivers 5V 4A Dual MOSFET
Lifecycle:
New from this manufacturer.
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