NCP5351
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7
Figure 3. Application Diagram
V
ID2
V
ID3
V
ID4
PWRLS
V
FFB
SS
PWRGD
DRVON
I
LIM
R
OSC
V
CC
GATE1
GATE2
GATE3
GATE4
GND
V
ID1
V
ID0
V
ID5
ENABLE
CS2N
CS2P
CS1N
CS1P
SGND
V
DRP
V
FB
COMP
CS4N
CS4P
CS3N
CS3P
24
23
22
21
20
19
18
17
32
31
30
29
28
27
26
25
9
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
PWRGD
3.3 V
V
ID4
V
ID3
V
ID2
V
ID1
V
ID0
V
ID5
ENABLE
3.3 V
V
S
CO
EN
PGND
BST
TG
DRN
BG
NCP5351
3
2
1
7
6
4
5
8
12 V
5.0 V
ATX 12 V
V
S
CO
EN
PGND
BST
TG
DRN
BG
NCP5351
3
2
1
7
6
4
5
8
V
S
CO
EN
PGND
BST
TG
DRN
BG
NCP5351
3
2
1
7
6
4
5
8
V
S
CO
EN
PGND
BST
TG
DRN
BG
NCP5351
3
2
1
7
6
4
5
8
+
+
V
CORE
GND
NTC Near Inductor
SGND Near
Socket
V
FFB
Connection
NCP5314
NCP5351
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8
APPLICATIONS INFORMATION
Theory Of Operation
Enable Pin
The Enable Pin (EN) is controlled by a logic level input.
With a logic level high on the EN pin, the output states of the
drivers are controlled by applying a logic level voltage to the
CO pin. With a logic level low both gates are forced low. By
bringing both gates low when disabling, the output voltage
is prevented from ringing below ground, which could
potentially cause damage to the microprocessor or the
device being powered.
Undervoltage Lockout
The TG and BG are held low until V
S
reaches 4.25 V
during startup. The CO pin takes control of the gates’ states
when the V
S
threshold is exceeded. If V
S
decreases 300 mV
below threshold, the output gate will be forced low and
remain low until V
S
rises above startup threshold.
Adaptive Nonoverlap
The Adaptive Nonoverlap prevents a condition where the
top and bottom MOSFETs conduct at the same time and
short the input supply. When the top MOSFET is turning off,
the drain (switch node) is sampled and the BG is disabled for
a fixed delay time (tpdh
BG
) after the drain drops below 4 V,
thus eliminating the possibility of shoot−through. When the
bottom MOSFET is turning off, TG is disabled for a fixed
delay (tpdh
TG
) after BG drops below 2.0 V. (See Figure 2 for
complete timing information).
Layout Guidelines
When designing any switching regulator, the layout is
very important for proper operation. The designer should
follow some simple layout guidelines when incorporating
gate drivers in their designs. Gate drives experience high
di/dt during switching and the inductance of gate drive
traces should be minimized. Gate drive traces should be kept
as short and wide as practical and should have a return path
directly below the gate trace. The use of a ground plane is a
desirable way to return ground signals. Also, component
location will make a difference. The boost and the V
S
capacitor are the most critical and should be placed as close
as possible to the driver IC pins, as shown in Figure 4(a),
C21 and C17.
C17
1.0 F
R33
2.2
Gate
Driver
(a)
NCP5351
EN
V
S
BG
PGND
CO
BST
TG
DRN
5
6
7
8
4
3
2
1
GATE1
DRVON
5 V
C21
1.0 F
D32
BAT54
U3
12 V
Q7
80NO2
Q9
80NO2
(b)
Figure 4. Proper Layout (a), Component Selection (b)
NCP5351
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9
TYPICAL PERFORMANCE CHARACTERISTICS
Conditions: BST − DRN = 5.0 V;
Room Temperature;
Oscilloscope referenced to V
S
(5.0 V).
Figure 5. Top Gate Sinking Current from 0.108
Figure 6. Top Gate Sinking
Conditions: V
S
= 5.0 V;
Room Temperature;
CO = 0 V.
Figure 7. Bottom Gate Sinking Current from 0.108
Figure 8. Bottom Gate Sinking
0 V
0 V
−5.0 V
−5.0 V
CO
TG
0 V
−5.0 V
Input
Pulse
50 ns
−3.5 V
0 V
−4.5 V
−0.5 V
DRN
BG
−3.5 V
−4.5 V
Input
Pulse
50 ns
V
S
BST
PGND DRN
EN
CO
TG
BG
NCP5351
−5.0 V
R1
1.0 k
Measurement
R2*
0.108
*Applied after power up and input.
C4
100 nF
C3
100 nF
C2
1.0 F
C1
1.0 F
COM
HOT
V
S
PGND CO
EN
BST
TG
BG
NCP5351
−5.0 V
R1
1.0 k
Measurement
R2*
0.108
*Applied after power up and input.
C1
1.0 F
COM
HOT
DRN
R3
50
C2
1.0 F

NCP5351DG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IC DRVR SYNC BUCK MOSF 4A 8-SOIC
Lifecycle:
New from this manufacturer.
Delivery:
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