PACKAGE
SCHEMATIC
6/9/04
Page 1 of 10
© 2004 Fairchild Semiconductor Corporation
6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
MOC8111 MOC8112 MOC8113
DESCRIPTION
The MOC811X series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not
bonded to an external pin for improved noise immunity
FEATURES
High isolation voltage
5300 VAC RMS—1 minute
High BV
CEO
minimum 70 Volts
Current transfer ratio in selected groups:
MOC8111: 20% min.
MOC8112: 50% min.
MOC8113: 100% min.
Maximum switching time in saturation specified
Underwriters Laboratory (UL) recognized (File #E90700)
VDE recognized (File #94766)
APPLICATIONS
•Power Supply Regulators
Digital Logic Inputs
Microprocessor Inputs
Appliance Sensor Systems
Industrial Controls
EMITTER
COLLECTOR
1
2
3
ANODE
CATHODE
4
5
6
N/C
N/C
6
1
6
1
6
1
6/9/04
Page 2 of 10
© 2004 Fairchild Semiconductor Corporation
6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
MOC8111 MOC8112 MOC8113
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C Unless otherwise specified)
Parameter Symbol Value Unit
INPUT LED
Forward Current – Continuous I
F
90 mA
Forward Current – Peak (PW = 1µs, 300pps) I
F
(pk) 3 A
Reverse Voltage V
R
6Volts
LED Power Dissipation @ T
A
= 25°C
P
D
135 mW
Derate above 25°C 1.8 mW/°C
OUTPUT TRANSISTOR
Detector Power Dissipation @ T
A
= 25°C
P
D
200 mW
Derate above 25°C 2.67 mW/°C
TOTAL DEVICE
Total Device Power Dissipation @ T
A
= 25°C
P
D
260 mW
Derate above 25°C 3.5 mW/°C
Ambient Operating Temperature Range T
OPR
-55 to +100 °C
Storage Temperature Range T
STG
-55 to +150 °C
Lead Soldering Temperature
T
SOL
260 °C
(1/16” from case, 10 sec. duration)
6/9/04
Page 3 of 10
© 2004 Fairchild Semiconductor Corporation
6-PIN DIP OPTOCOUPLERS FOR
POWER SUPPLY APPLICATIONS
(NO BASE CONNECTION)
MOC8111 MOC8112 MOC8113
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter Test Conditions Symbol Device Min Typ Max Unit
EMITTER
Input Forward Voltage
I
F
= 60 mA
V
F
All
1.35 1.65
V
I
F
= 10 mA 1.15 1.50
Reverse Voltage I
R
= 10 µA V
R
All 6.0 15 V
Capacitance
V
F
= 0 V, f = 1.0 MHz
C
J
All
50
pF
V
F
= 1 V, f = 1.0 MHz 65
Reverse Leakage Current V
R
= 3.0 V I
R
All .35 10 µA
DETECTOR
Breakdow Voltage
Collector to Emitter
I
C
= 1.0 mA, I
F
= 0 BV
CEO
All 70 V
Breakdow Voltage
Emitter to Collector
I
E
= 100 µA, I
F
= 0 BV
ECO
All 7 V
Leakage Current
Collector to Emitter
V
CE
= 10 V, I
F
= 0 I
CEO
All 5 50 V
Capacitance
Collector to Emitter
V
CE
= 0 V, f = 1 MHz C
CE
All 8 pF
ISOLATION CHARACTERISTICS
Characteristic Test Conditions Symbol Min Typ Max Units
Input-Output Isolation Voltage f = 60 Hz, t = 1 min. V
ISO
5300 V
RMS
Isolation Resistance V
I-O
= 500 VDC R
ISO
10
11
Isolation Capacitance V
I-O
= 0, f = 1 MHz C
ISO
0.5 pF

MOC8111300

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
OPTOISOLATOR 5.3KV TRANS 6-DIP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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