NTHD5903T1G Datasheet NTHD5903T1G | P1-P3

November, 2005 − Rev. 4

1 Publication Order Number:

NTHD5903/D

NTHD5903

Power MOSFET

−20 V, −3.0 A, Dual P−Channel ChipFETE

Features

• Low R

DS(on)

for Higher Efficiency

• Logic Level Gate Drive

• Miniature ChipFET Surface Mount Package Saves Board Space

• Pb−Free Package is Available

Applications

• Power Management in Portable and Battery−Powered Products;

i.e., Cellular and Cordless Telephones and PCMCIA Cards

MAXIMUM RATINGS (T

A

= 25°C unless otherwise noted)

Rating Symbol 5 secs

Steady

State

Unit

Drain−Source Voltage V

DS

−20 V

Gate−Source Voltage V

GS

"12 V

Continuous Drain Current

(T

J

= 150°C) (Note 1)

T

A

= 25°C

T

A

= 85°C

I

D

"3.0

"2.2

"1.6

A

Pulsed Drain Current I

DM

"10 A

Continuous Source Current

(Diode Conduction) (Note 1)

I

S

−3.0 −2.2 A

Maximum Power Dissipation

(Note 1)

T

A

= 25°C

T

A

= 85°C

P

D

2.1

1.1

0.6

W

Operating Junction and Storage

Temperature Range

T

J

, T

stg

−55 to +150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq

[1 oz] including traces).

G

1

G

2

S

1

D

1

S

2

D

2

P−Channel MOSFETP−Channel MOSFET

Device Package Shipping

†

ORDERING INFORMATION

NTHD5903T1 ChipFET 3000/Tape & Ree

l

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

s

Brochure, BRD8011/D.

−20 V

130 mW @ −4.5 V

I

D

MAXV

(BR)DSS

R

DS(on)

TYP

−3.0 A

215 mW @ −2.5 V

ChipFET

CASE 1206A

STYLE 2

MARKING

DIAGRAM

1

2

3

4

S

1

G

1

S

2

G

2

D

1

D

1

D

2

D

2

CONNECTIONS

8

7

6

5

6

7

81

2

3

4

NTHD5903T1G ChipFET

(Pb−Free)

3000/Tape & Ree

l

A7 = Specific Device Code

M = Month Code

G = Pb−Free Package

A7 M

G

NTHD5903

http://onsemi.com

2

THERMAL CHARACTERISTICS

Characteristic Symbol Typ Max Unit

Maximum Junction−to−Ambient (Note 2)

t v 5 s

Steady State

R

q

JA

50

90

60

110

°C/W

Maximum Junction−to−Foot (Drain) Steady State

R

q

JF

30 40 °C/W

2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted)

Characteristic Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= −250 mA

−0.6 V

Gate−Body Leakage I

GSS

V

DS

= 0 V, V

GS

= "12 V "100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= −16 V, V

GS

= 0 V −1.0 mA

V

DS

= −16 V, V

GS

= 0 V,

T

J

= 85°C

−5.0

On−State Drain Current (Note 3) I

D(on)

V

DS

v −5.0 V, V

GS

= −4.5 V −10 A

Drain−Source On−State Resistance (Note 3) r

DS(on)

V

GS

= −4.5 V, I

D

= −2.2 A 0.130 0.155 W

V

GS

= −3.6 V, I

D

= −2.0 A 0.150 0.180

V

GS

= −2.5 V, I

D

= −1.7 A 0.215 0.260

Forward Transconductance (Note 3) g

fs

V

DS

= −10 V, I

D

= −2.2 A 5.0 S

Diode Forward Voltage (Note 3) V

SD

I

S

= −2.2 A, V

GS

= 0 V −0.8 −1.2 V

Dynamic (Note 4)

Total Gate Charge Q

g

V

DS

= −10 V, V

GS

= −4.5 V,

I

D

= −2.2 A

3.7 7.4

nC

Gate−Source Charge Q

gs

0.8

Gate−Drain Charge Q

gd

1.3

Turn−On Delay Time t

d(on)

V

DD

= −10 V, R

L

= 10 W

I

D

^ −1.0 A, V

GEN

= −4.5 V,

R

G

= 6 W

13 20

ns

Rise Time t

r

35 55

Turn−Off Delay Time t

d(off)

25 40

Fall Time t

f

25 40

Source−Drain Reverse Recovery Time t

rr

I

F

= −2.2 A, di/dt = 100 A/ms

40 80

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

4. Guaranteed by design, not subject to production testing.

NTHD5903

http://onsemi.com

3

TYPICAL ELECTRICAL CHARACTERISTICS

−3 V

125°C

0

10

5

8

6

632

−V

DS

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

I

D,

DRAIN CURRENT (AMPS)

4

2

0

1

Figure 1. On−Region Characteristics

0

10

8

324

6

4

2

1

0

5

Figure 2. Transfer Characteristics

−V

GS

, GATE−TO−SOURCE VOLTAGE (VOLTS)

1

24

3

2

0

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

−V

GS

, GATE−TO−SOURCE VOLTAGE (VOLTS)

R

DS(on),

DRAIN−TO−SOURCE RESISTANCE (

W

)

I

D,

DRAIN CURRENT (AMPS)

191

0

85

0.25

4

0.15

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

−I

D,

DRAIN CURRENT (AMPS)

−50 0−25 25

1.4

1.2

1

0.8

0.6

50 125100

Figure 5. On−Resistance Variation with

Temperature

T

J

, JUNCTION TEMPERATURE (°C)

T

J

= 25°C

V

GS

= −1.4 V

4

13

T

C

= −55°C

I

D

= −2.2 A

T

J

= 25°C

0.4

0.05

75 150

T

J

= 25°C

I

D

= −2.2 A

V

GS

= −4.5 V

R

DS(on),

DRAIN−TO−SOURCE

RESISTANCE (NORMALIZED)

4

25°C

R

DS(on),

DRAIN−TO−SOURCE RESISTANCE (W)

1.6

V

GS

= −4.5 V

V

GS

= −3.6 V

−1.8 V

−2.2 V

05

7623

04 8

1.0E−11

2

0

16

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

−V

DS

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

12

V

GS

= 0 V

I

DSS

, LEAKAGE (A)

T

J

= 150°C

T

J

= 100°C

−2.4 V

−2.6 V

−2.8 V

−3.4 V

−3.6 V

V

GS

= −4 V − 10 V

0.35

0.2

0.1

0.3

V

GS

= −2.5 V

1.0E−10

1.0E−9

1.0E−8

1.0E−7

1.0E−6

T

J

= 25°C

NTHD5903T1G

NTHD5903T1G

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