Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
1
Rev. C
04/15/05
IS61LV5128AL ISSI
®
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
512K x 8 HIGH-SPEED CMOS STATIC RAM
APRIL 2005
FEATURES
• High-speed access times:
10, 12 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE
options
• CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 3.3V power supply
• Packages available:
– 36-pin 400-mil SOJ
– 36-pin miniBGA
– 44-pin TSOP (Type II)
• Lead-free available
DESCRIPTION
The ISSI IS61LV5128AL is a very high-speed, low power,
524,288-word by 8-bit CMOS static RAM. The
IS61LV5128AL is fabricated using ISSI's high-perform-
ance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields
higher performance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 µW (typical) with CMOS input levels.
The IS61LV5128AL operates from a single 3.3V power
supply and all inputs are TTL-compatible.
The IS61LV5128AL is available in 36-pin 400-mil SOJ, 36-
pin mini BGA, and 44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A18
CE
OE
WE
512K X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
