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PHD16N03LT,118

P1-P3P4-P6P7-P9P10-P12
Philips Semiconductors
PHD16N03LT
N-channel TrenchMOS™ logic level FET
Product data Rev. 01 — 08 March 2004 4 of 12
9397 750 12382
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5. Thermal characteristics
5.1 Transient thermal impedance
Table 4: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from junction to mounting base Figure 4 - - 4.6 K/W
R
th(j-a)
thermal resistance from junction to ambient mounted on a printed-circuit
board; vertical in still air;
SOT428 minimum footprint
- 75 - K/W
mounted on a printed-circuit
board; vertical in still air;
SOT404 minimum footprint
- 50 - K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
03ao28
10
-1
1
10
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
Z
th(j-mb)
(K/W)
single pulse
δ
= 0.5
0.2
0.1
0.05
0.02
t
p
t
p
T
P
t
T
δ =
Philips Semiconductors
PHD16N03LT
N-channel TrenchMOS™ logic level FET
Product data Rev. 01 — 08 March 2004 5 of 12
9397 750 12382
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown voltage I
D
= 250 µA; V
GS
=0V
T
j
=25°C 30--V
T
j
= −55 °C 27--V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS
; Figure 9
T
j
=25°C 1 1.5 2 V
T
j
= 175 °C 0.5 - - V
T
j
= −55 °C - - 2.2 V
I
DSS
drain-source leakage current V
DS
=30V; V
GS
=0V
T
j
=25°C --10µA
T
j
= 175 °C - - 500 µA
I
GSS
gate-source leakage current V
GS
= ±20 V; V
DS
= 0 V - 2 100 nA
R
DSon
drain-source on-state resistance V
GS
=10V; I
D
=16A;Figure 7 and 8
T
j
=25°C - 50 67 mΩ
T
j
= 175 °C - 95 127 mΩ
V
GS
= 4.5 V; I
D
=13A;Figure 7 - 76 100 mΩ
Dynamic characteristics
Q
g(tot)
total gate charge I
D
= 15 A; V
DS
=15V; V
GS
=10V;
Figure 13
- 8.5 - nC
Q
gs
gate-source charge - 1.8 - nC
Q
gd
gate-drain (Miller) charge - 2 - nC
C
iss
input capacitance V
GS
=0V; V
DS
= 30 V; f = 1 MHz;
Figure 11
- 210 - pF
C
oss
output capacitance - 85 - pF
C
rss
reverse transfer capacitance - 60 - pF
t
d(on)
turn-on delay time V
DD
=15V; R
L
=1Ω;
V
GS
=10V;R
G
= 5.6 Ω
-8-ns
t
r
rise time -6-ns
t
d(off)
turn-off delay time - 15.5 - ns
t
f
fall time -5-ns
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 10 A; V
GS
=0V;Figure 12 - 0.98 1.2 V
Philips Semiconductors
PHD16N03LT
N-channel TrenchMOS™ logic level FET
Product data Rev. 01 — 08 March 2004 6 of 12
9397 750 12382
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
j
=25°CT
j
=25°C and 175 °C; V
DS
> I
D
xR
DSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T
j
=25°C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ao30
0
5
10
15
20
0 0.5 1 1.5 2
V
DS
(V)
I
D
(A)
T
j
= 25
°
C
V
GS
= 2.4 V
10 V 5 V
2.8 V
6 V
3.6 V
3.2 V
4.5 V
4 V
03ao32
0
5
10
15
20
0246
V
GS
(V)
I
D
(A)
V
DS
> I
D
x R
DSon
T
j
= 25
°
C
175
°
C
03ao31
0
50
100
150
0 5 10 15 20
I
D
(A)
R
DSon
(m
Ω
)
T
j
= 25
°
C
6 V
10 V
5 V
V
GS
= 3.6 V
4 V
4.5 V
03aa27
0
0.5
1
1.5
2
-60 0 60 120 180
T
j
(
°
C)
a
a
R
DSon
R
DSon 25 C
°
()
-----------------------------
=
P1-P3P4-P6P7-P9P10-P12

PHD16N03LT,118

Mfr. #:
Buy PHD16N03LT,118
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 30V 16A DPAK
Lifecycle:
New from this manufacturer.
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