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PHD16N03LT,118
P1-P3
P4-P6
P7-P9
P10-P12
Philips Semiconductors
PHD16N03L
T
N-channel T
renchMOS™ logic level FET
Product data
Rev
. 01 — 08 Marc
h 2004
7 of 12
9397 750 12382
© Koninklijk
e Philips Electronics N.V
. 2004. All rights reser
ved.
I
D
= 1 mA; V
DS
=V
GS
T
j
=2
5
°
C; V
DS
=5V
Fig 9.
Gate-source threshold v
oltage as a function of
junction temperature.
Fig 10.
Sub-threshold drain current as a function of
gate-source v
oltage.
V
GS
= 0 V
; f = 1 MHz
Fig 11.
Input, output and rever
se transfer capacitances as a function of drain-source v
oltage; typical values.
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
T
j
(
°
C)
V
GS
(th
)
(V
)
max
typ
mi
n
03aa36
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
01
23
V
GS
(V
)
I
D
(A
)
max
typ
mi
n
03ao34
10
10
2
10
3
10
-1
1
10
10
2
V
DS
(V
)
C
(pF
)
C
iss
C
oss
C
rss
Philips Semiconductors
PHD16N03L
T
N-channel T
renchMOS™ logic level FET
Product data
Rev
. 01 — 08 Marc
h 2004
8 of 12
9397 750 12382
© Koninklijk
e Philips Electronics N.V
. 2004. All rights reser
ved.
T
j
=2
5
°
C and 175
°
C; V
GS
=0V
I
D
= 15 A; V
DD
=1
5V
Fig 12.
Sour
ce (diode forward) current as a function of
source-drain (diode f
orward) v
oltage; typical
values.
Fig 13.
Gate-source v
oltage as a function of gate
charge; typical v
alues.
03ao33
0
5
10
15
20
00
.
511
.
5
V
SD
(V
)
I
S
(A
)
T
j
= 25
°
C
175
°
C
V
GS
= 0 V
03ao35
0
2
4
6
8
10
02
46
8
1
0
Q
G
(nC
)
V
GS
(V
)
I
D
= 15 A
T
j
= 25
°
C
V
DD
= 15 V
Philips Semiconductors
PHD16N03L
T
N-channel T
renchMOS™ logic level FET
Product data
Rev
. 01 — 08 Marc
h 2004
9 of 12
9397 750 12382
© Koninklijk
e Philips Electronics N.V
. 2004. All rights reser
ved.
7.
P
ac
kage outline
Fig 14.
SO
T428 (D-P
AK).
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT428
TO-252
SC-63
99-09-13
01-12-11
0
10
20 mm
scale
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
E
b
2
E
1
wA
M
bc
b
1
L
1
L
13
2
D
D
1
H
E
L
2
Note
1. Measured from heatsink back to lead.
e
1
e
A
A
2
A
A
1
y
seating plane
mounting
base
A
1
(1)
D
b
E
1
EH
E
w
y
max.
A
2
b
2
b
1
c
D
1
min.
ee
1
L
1
min.
L
2
L
A
UNIT
DIMENSIONS (mm are the original dimensions)
0.2
0.2
mm
2.38
2.22
0.65
0.45
0.93
0.73
0.89
0.71
1.1
0.9
5.46
5.26
0.4
0.2
6.22
5.98
4.81
4.45
2.285
4.57
10.4
9.6
0.5
0.9
0.5
6.73
6.47
4.0
2.95
2.55
P1-P3
P4-P6
P7-P9
P10-P12
PHD16N03LT,118
Mfr. #:
Buy PHD16N03LT,118
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 30V 16A DPAK
Lifecycle:
New from this manufacturer.
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