Typical values (unless otherwise specified)
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET
®
Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
DirectFET ISOMETRIC
Description
The IRF9383MTRPbF combines the latest HEXFET
®
P-Channel Power MOSFET Silicon technology with the advanced DirectFET
®
packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET
®
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
®
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
DirectFET
®
P-Channel Power MOSFET
l Environmentaly Friendly Product
l RoHs Compliant Containing no Lead,
no Bromide and no Halogen
l Common-Drain P-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Features and Benefits
Applications
l Isolation Switch for Input Power or Battery Application
l High Side Switch for Inverter Applications
2 4 6 8 10 12 14 16 18 20
-V
GS,
Gate -to -Source Voltage (V)
0
2
4
6
8
10
12
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
Ω
)
I
D
= -22A
T
J
= 25°C
T
J
= 125°C
0 20 40 60 80 100 120 140 160 180
Q
G
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
-
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= -24V
V
DS
= -15V
V
DS
= -6.0V
I
D
= -18A
V
DSS
V
GS
R
DS(on)
R
DS(on)
-30V max ±20V max
2.3mΩ@-10V 3.8mΩ@-4.5V
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
67nC 29nC 9.4nC 315nC 59nC -1.8V
Parameter Units
V
DS
Drain-to-Source Voltage
V
Gate-to-Source Voltage
I
@ T
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
@ T
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
@ T
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
Pulsed Drain Current
V
A
Max.
-17
-160
-180
±20
-30
-22
SQ SX ST MQ MX MT MP MC
IRF9383MPbF
1
www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015
DD
G
S
S
Form Quantity
IRF9383MTRPbF
DirectFET
®
Medium Can
Tape and Reel 4800
IRF9383MTR1PbF
DirectFET
®
Medium Can
Tape and Reel 1000 "TR1" suffix EOL notice #264
Orderable part number Package Type
Standard Pack
Note
