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IRF9383MTR1PBF

P1-P3P4-P6P7-P9P10-P10
www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015
4
IRF9383MPbF
Fig 5. Typical Output Characteristics
Fig 4. Typical Output Characteristics
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP -10V
-5.0V
-4.5V
-3.5V
-3.25V
-3.0V
-2.75V
BOTTOM -2.5V
≤
60μs PULSE WIDTH
Tj = 25°C
-2.5V
0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
-2.5V
≤
60μs PULSE WIDTH
Tj = 150°C
VGS
TOP -10V
-5.0V
-4.5V
-3.5V
-3.25V
-3.0V
-2.75V
BOTTOM -2.5V
1 2 3 4 5
-V
GS
, Gate-to-Source Voltage (V)
1.0
10
100
1000
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 150°C
T
J
= 25°C
T
J
= -40°C
V
DS
= -15V
≤
60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= -22A
V
GS
= -10V
V
GS
= -4.5V
1 10 100
-V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 20 40 60 80 100 120 140 160 180
-I
D
, Drain Current (A)
2
4
6
8
10
12
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
Ω
)
T
J
= 25°C
Vgs = -3.5V
Vgs = -4.5V
Vgs = -5.0V
Vgs = -6.0V
Vgs = -8.0V
Vgs = -10V
Vgs = -12V
Vgs = -15V
www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 20155
IRF9383MPbF
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 11. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy vs. Drain Current
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
-V
SD
, Source-to-Drain Voltage (V)
0
1
10
100
1000
-
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 150°C
T
J
= 25°C
T
J
= -40°C
V
GS
= 0V
25 50 75 100 125 150
T
C
, Case Temperature (°C)
0
5
10
15
20
25
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-
T
y
p
i
c
a
l
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= -150μA
I
D
= -250μA
I
D
= -1.0mA
I
D
= -1.0A
25 50 75 100 125 150
Starting T
J
, Junction Temperature (°C)
0
500
1000
1500
2000
2500
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP -1.6A
-2.3A
BOTTOM -18A
0.01 0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100μsec
DC
www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015
6
IRF9383MPbF
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
Fig 19b. Switching Time Waveforms
Fig 19a. Switching Time Test Circuit
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2QgdQgodr
1K
VCC
DUT
0
L
S
20K
S
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
-V
GS
V
DS
-V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
t
p
V
(
BR
)
DSS
I
AS
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
P1-P3P4-P6P7-P9P10-P10

IRF9383MTR1PBF

Mfr. #:
Buy IRF9383MTR1PBF
Manufacturer:
Infineon / IR
Description:
MOSFET P-CH -30V -160A 2.9mOhm -4.5V M-Can
Lifecycle:
New from this manufacturer.
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