© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 1
1 Publication Order Number:
NTLJD3180PZ/D
NTLJD3182FZ
Power MOSFET and
Schottky Diode
−20 V, −4.0 A, Single P−Channel &
Schottky Barrier Diode, ESD
Features
• WDFN 2x2 mm Package with Exposed Drain Pads for Excellent
Thermal Conduction
• Lowest R
DS(on)
Solution in 2x2 mm Package
• Footprint Same as SC−88 Package
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• ESD Protected
• High Current Schottky Diode: 2 A Current Rating
• This is a Pb−Free Device
Applications
• Optimized for Battery and Load Management Applications in
Portable Equipment
• Li−Ion Battery Charging and Protection Circuits
• DC−DC Buck Circuit
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
−20 V
Gate−to−Source Voltage V
GS
±8.0 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
−3.2
A
T
A
= 85°C −2.3
t ≤ 5 s T
A
= 25°C −4.0
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C
P
D
1.5
W
t ≤ 5 s 2.3
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
−2.2
A
T
A
= 85°C −1.6
Power Dissipation
(Note 2)
T
A
= 25°C
P
D
0.71 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
−16 A
Operating Junction and Storage Temperature T
J
, T
STG
−55 to
150
°C
Source Current (Body Diode) (Note 2) I
S
−1.0 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
SCHOTTKY MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Peak Repetitive Reverse Voltage V
RRM
30 V
DC Blocking Voltage V
R
30 V
Average Rectified Forward Current I
F
2.0 A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size,
(30 mm
2
, 2 oz Cu).
www.onsemi.com
G
S
P−CHANNEL MOSFET
D
JJ = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
JJMG
G
1
2
3
6
5
4
WDFN6
CASE 506AN
MARKING
DIAGRAM
1
2
3
6
5
4
A
N/C
D
K
G
S
(Top View)
PIN CONNECTIONS
SCHOTTKY DIODE
K
A
−20 V
20 V
144 mW @ −2.5 V
100 mW @ −4.5 V
2.0 A
R
DS(on)
Max
0.47 V
I
D
Max
V
(BR)DSS
P−CHANNEL MOSFET
SCHOTTKY DIODE
V
R
Max I
F
MaxV
F
Max
−4.0 A
200 mW @ −1.8 V
See detailed ordering and shipping information on page 3 of
this data sheet.
ORDERING INFORMATION
K
D
D
K
Pin 1
