NTLJD3182FZTAG

NTLJD3182FZ
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4
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
1.5
0
0.28
3.5 7.5
1.25
1.75
1.0
0.75
0.5
10000
021
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
2.0 4.0
0.02
8.0
Figure 3. OnResistance versus Drain Current
I
D
, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. DraintoSource Leakage Current
versus Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAINTOSOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
50 5025025 75 125100
1
0124
3
2
4
V
DS
5 V
T
J
= 25°C
T
J
= 55°C
T
J
= 125°C
V
GS
= 1.8 V
V
GS
= 0 V
I
D
= 2 A
V
GS
= 4.5 V
6
0.12
T
J
= 125°C
T
J
= 150°C
4
0
1.5
T
J
= 25°C
20
V
GS
= 2.5 V to 5 V
2.2 V
3
1000
4
8
0
8
0.04
0.04
T
J
= 25°C
150
100000
2.5
1.4 V
1.8 V
1.2 V
T
J
= 25°C
V
GS
= 4.5 V
T
J
= 55°C
T
J
= 125°C
0.12
V
GS
= 4.5 V
V
GS
= 2.5 V
816
20.5
6.0
5
1.6 V
1.0 V
2
6
0.32
0.20
5.5
100
0.1
0.08
0.06
1.5
2.0 V
0.24
0.16
0.08
2.5 4.5 6.5
NTLJD3182FZ
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5
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
51520
DRAINTOSOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
0
600
010
V
GS
= 0 V
T
J
= 25°C
C
oss
C
rss
C
iss
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
1 10 100
1000
1
t, TIME (ns)
100
t
r
t
d(off)
t
d(on)
t
f
10
V
DD
= 5.0 V
I
D
= 2.0 A
V
GS
= 4.5 V
0
0
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
V
GS
= 0 V
Figure 10. Diode Forward Voltage versus Current
1.0
1
0.6
2
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1 1 100
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
1
100
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
1 ms
100 ms
10 ms
dc
T
J
= 25°C
0.1
0.01
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
0
3
0
Q
G
, TOTAL GATE CHARGE (nC)
5
4
24
I
D
= 3.8 A
T
J
= 25°C
V
GS
Q
GS
Q
GD
QT
2
1
6
0.5
0.80.40.2
I
D
, DRAIN CURRENT (AMPS)
I
S
, SOURCE CURRENT (AMPS)
400
200
135
1.5
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6
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
Figure 12. Thermal Response
t, TIME (s)
1
1000
0.1
0.2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
A
= P
(pk)
R
q
JA
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100 1000100.10.0010.00010.000001
0.1
100
10
10.010.00001
*See Note 2 on Page 1
EFFECTIVE TRANSIENT THERMAL RESISTANCE

NTLJD3182FZTAG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET 20V 4.1A UCOOL FETKY
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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