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BA12003B

P1-P3P4-P6P7-P7
BA12001B / BA12003B / BA12003BF / BA12004B
Standard ICs
High voltage, high current Darlington
transistor array
BA12001B / BA12003B / BA12003BF / BA12004B
The BA12001B, BA12003B, BA12003BF, and BA12004B are high voltage, high current, high sustain voltage transistor
arrays consisting of seven circuits of Darlington transistors.
Because it incorporates built-in surge-absorbing diodes and base current-control resistors needed when using inductive
loads such as relay coils, attachments can be kept to a minimum.
With an output sustain voltage as high as 60V and an output current (sink current) of 500mA, this product is ideal for use
with various drivers and as an interface with other elements.
!Applications
Drivers for LEDs, lamps, relays and solenoids
Interface with other elements
!Features
1) High output current. (I
OUT
=500mA Max.)
2) High output sustain voltage. (V
OUT
=50V Max.)
3) Seven Darlington transistors built in.
4) Built-in surge-absorbing clamp diode.
(Note : Refer to the “Reference items when using in application.” )
!
!!
!
Block diagram
IN1
IN2
IN3
IN4
IN5
IN6
IN7
GND
OUT1
OUT2
OUT3
OUT4
OUT5
OUT6
OUT7
COM
8
16
15
14
13
12
11
10
1
2
3
4
5
6
7
9
BA12001B / BA12003B / BA12003BF / BA12004B
Standard ICs
!
!!
!Internal circuit configuration
IN
COM
OUT
GND
3kΩ
7.2kΩ
Fig.1
BA12001B
IN
COM
OUT
GND
3kΩ
7.2kΩ
2.7kΩ
Fig.2
BA12003B / BF
IN
COM
OUT
GND
3kΩ
7.2kΩ
10.5kΩ
Fig.3
BA12004B
!
!!
!Absolute maximum ratings (Ta=25°C)
Parameter Symbol Limits Unit
V
CE
60 V
Input voltage
Input current
V
IN
−0.5∼+30 Vother than BA12001B
BA12001B
DIP package
SOP package
I
IN
25
Output current I
OUT
500
Ground pin current I
GND
2.3
∗
1
A
Power dissipation
Pd
1250
∗
2
625
∗
3
mW
Diode reverse voltage V
R
60 V
Diode forward current I
F
500 mA
Operating temperature Topr −25∼+75 ˚C
Storage temperature Tstg −55∼+150 ˚C
mA / unit
mA / unit
Power supply voltage
∗
1 Pulse width ≤ 20ms, duty cycle ≤ 10%, same current for all 7 circuits
∗
2 Reduced by 10mW for each increase in Ta of 1˚C over 25˚C .
∗
3 Reduced by 50mW for each increase in Ta of 1˚C over 25˚C .
!
!!
!Recommended operating conditions (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Output current I
OUT
−−350 mA Fig.9, 10
Power supply voltage V
CE
−−
55 V
−
Input voltage (excluding BA12001B)
V
IN
−−30 V −
Input current (BA12001B only) I
IN
−−25 −mA / unit
BA12001B / BA12003B / BA12003BF / BA12004B
Standard ICs
!
!!
!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Output leakage current I
L
−
010
µA
V
CE
= 60V
DC current transfer ratio h
FE
1000 2400 − V
Output saturation voltage V
CE(sat)
−
0.94 1.1
V1.14 1.3
1.46 1.6
Input voltage
V
IN
− V
1.75 2
2.53 5
V
IN
− V
1.91 2.4
2.75 6
V
IN
−
V
2.17 3.4
3.27 8
Input current
I
IN
−
mA
V
IN
= 3.85V0.90 1.35
BA12003B / BF
BA12004B
BA12003B / BF
BA12004B
BA12003B / BF
BA12004B
BA12003B / BF
BA12004B 0.39 0.5
Diode reverse current
I
R
− 050µAV
R
= 60V
Diode forward voltage V
F
− 1.73 2 V I
F
= 350mA
Input capacitance C
IN
− 30 − pF
V
CE
= 2V, I
OUT
= 350mA
I
OUT
= 100mA, I
IN
= 250µA
I
OUT
= 200mA, I
IN
= 350µA
I
OUT
= 350mA, I
IN
= 500µA
V
CE
= 2V, I
OUT
= 100mA
V
CE
= 2V, I
OUT
= 200mA
V
CE
= 2V, I
OUT
= 350mA
V
IN
= 5V
V
IN
= 0V, f = 1MHz
Note: Input voltage and input current for BA12001 vary based on external resistor.
!
!!
!
Measurement circuits
OPEN
OPEN
I
L
V
CE
(1) Output leakage current I
L
OPEN
I
I
I
O
V
CE
(sat)
(2) DC current transfer ratio
Output saturation voltage
I
I
I
O
V
CE
(
sat)
h
FE
=
OPEN
I
O
V
CE
V
I
(3) Input voltage V
IN
OPEN
OPEN
VI
(4) Input current I
IN
OPEN
I
R
V
R
OPEN
(5) Diode reverse current I
R
OPEN
OPEN
I
F
V
F
(6) Diode forward voltage IF
OPEN
OPEN
V
I
L
O
H
I
Capacitance
bridge
f
TEST SIGNAL LEVEL 20mVrms
(7) Input capacitance C
IN
Fig.4
P1-P3P4-P6P7-P7

BA12003B

Mfr. #:
Buy BA12003B
Manufacturer:
ROHM Semiconductor
Description:
Buffers & Line Drivers RECOMMENDED ALT 755-BA12003DF-ZE2
Lifecycle:
New from this manufacturer.
Delivery:
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