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BA12003B

P1-P3P4-P6P7-P7
BA12001B / BA12003B / BA12003BF / BA12004B
Standard ICs
!
!!
!Application example
RY
(1) Relay driver
LED
(2) LED driver
Fig.5
!
!!
!Application notes
The BA12001B is a transistor array which can be directly coupled to a general logic circuit such as PMOS, CMOS, or
TTL.
A current limiting resistor needs to be connected in series with the input.
The BA12003B / BF can be coupled directly to TTL or CMOS output (when operating at 5V). In order to limit the input
current to a stable value, resistors are connected in series to each of the inputs.
The BA12004B is designed for direct coupling to CMOS or PMOS output using a 6 to 15V power supply voltage. In order
to limit the input current to a stable value, resistors are connected in series to each of the inputs.
The load for each of these products should be connected between the driver output and the power supply. To protect the
IC from excessive swing voltage, the COM pin (Pin 9) should be connected to the power supply.
Fig.6 shows the configuration of the on-chip diode for surge absorption.
In the construction of the surge-absorbing diode,there is an N-P junction between the N-layer (N-well + BL) and the
substrate (P-sub) so that when the diode is on, current flows from the output pin to the substrate. In terms of the vertical
construction, this diode is configured similar to a PNP transistor. When using the surge-absorbing diode, take appropriate
measures regarding the thermal characteristics of the design considering the current that will be handled.
Also, if motor back-rush current or other conditions that will result continued surge current to flow to the surge-absorbing
diode can be foreseen, we strongly recommend connecting a Schottky barrier diode (or other type of diode with a low
foward voltage) in parallel with the surge-absorbing diode to construct a bypass route for the surge current.
ISO
P
ISO
P
B / L
IDi
Isub
N
+
P
+
In-flow current to the surge-absorbing diode
N
+
N
+
OUT COM
P-sub
Fig.6 Vertical construction of the surge-absorbing diode
N-well
BA12001B / BA12003B / BA12003BF / BA12004B
Standard ICs
!
!!
!Electrical characteristic curves
POWER DISSIPATION : Pd (mW)
AMBIENT TEMPERATURE : Ta (˚C)
1200
1250
1400
1000
800
600
625
200
0
25 50 75 100 125 150
Fig.7 Power dissipation vs. ambient
temperature
Other than BA12003BF
BA12003BF
400
OUTPUT CURRENT : I
O
(mA)
DUTY CYCLE : (%)
500
400
300
200
100
0
10 20 30 40 50 60 70 80 90 100
All series
2ch
4ch
5ch
7ch
6ch
3ch
Fig.8 Output conditions (I)
OUTPUT CURRENT : I
OUT
(mA)
DUTY CYCLE (%)
500
400
350
300
200
100
0 20 40 60 80 100
10% 20%
Ta = 75˚C
Ta = 25˚C
110mA
64mA
Fig.9 Output conditions (II)
When all circuits are on
All series
OUTPUT CURRENT: I
OUT
(mA)
SUPPLY VOLTAGE: V
CC
(V)
500
400
350
300
200
100
0
10 20 30 40 50
Max. usage conditions
Usage conditions range
Fig.10 Usage conditions range
per circuit
The shaded range should
never be exceeded under
any circumstances
DC CURRENT GAIN : h
FE
OUTPUT CURRET : I
OUT
(mA)
5000
2000
1000
100
200
500
Ta = 25˚C
V
CE
= 2.0V
10 20 50 100 200 500 1000
Fig.11 DC current transfer ratio
vs. output current
OUTPUT CURRENT : I
OUT
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
500
400
300
0
100
200
0 0.5 1.0 1.5 2.0 2.5
Ta = 25˚C
Ta = 80˚C
Ta = −30˚C
I
IN
= 250µA
Fig.12 Output current vs. voltage
between collector and emitter
OUTPUT CURRENT : I
OUT
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
500
400
300
0
100
200
10 0.5 1.0 1.5 2.0 2.5
Ta = 25˚C
Ta = 80˚C
Ta = −30˚C
I
IN
= 350µA
Fig.13 Output current vs. voltage
between collector and emitter
OUTPUT CURRENT : I
OUT
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
500
400
300
0
100
200
0 0.5 1.0 1.5 2.0 2.5
Ta = 25˚C
Ta = 80˚C
Ta = −30˚C
I
IN
= 500
µ
A
Fig.14 Output current vs. voltage
between collector and emitter
INPUT CURRENT : I
IN
(mA)
INPUT VOLTAGE : V
IN
(V)
20
15
10
0
5
10 20 30 40
Ta = −25˚C
Ta = 25˚C
Ta = 75˚C
Fig.15 Input current vs. input
voltage (BA12003B / BF)
BA12001B / BA12003B / BA12003BF / BA12004B
Standard ICs
INPUT VOLTAGE : V
IN
(V)
INPUT CURRENT : I
IN
(mA)
4
3
2
1
0
10 20 30 40
Ta = 25˚C
Ta = 75˚C
Ta = −25˚C
Fig.16 Input current vs. input
voltage (BA12004B)
OUTPUT VOLTAGE : V
CE OUT
(V)
INPUT VOLTAGE : V
IN
(V)
0.5 1 1.5 2.52
25
20
15
10
5
0
Ta = 75˚C
Ta = 25˚C
Ta = −25˚C
V
OUT
=
20V
R
L
=
68Ω
Fig.17 Output voltage vs. input
voltage (BA12003B / BF)
OUTPUT VOLTAGE : V
OUT
(V), V
CE
(V)
25
20
5
15
10
0
12345
Ta = 75˚C
Ta = 25˚C
Ta = −25˚C
V
OUT
= 20V
R
L
= 68Ω
INPUT VOLTAGE : V
IN
(V), V
I
(V)
Fig.18 Output voltage vs. input
voltage (BA12004B)
!
!!
!
External dimensions
(Units : mm)
DIP16 SOP16
BA12001B / BA12003B / BA12004B BA12003BF
0.4 ± 0.11.27
0.15
0.15 ± 0.1
0.3Min.
4.4 ± 0.2
6.2 ± 0.3
0.11
1.5 ± 0.1
1
16
10.0 ± 0.2
8
9
0.51Min.
0.3 ± 0.1
916
81
6.5 ± 0.3
3.2
±
0.2
4.25
±
0.3
0.5 ± 0.1
19.4 ± 0.3
2.54
0
°
~ 15
°
7.62
P1-P3P4-P6P7-P7

BA12003B

Mfr. #:
Buy BA12003B
Manufacturer:
ROHM Semiconductor
Description:
Buffers & Line Drivers RECOMMENDED ALT 755-BA12003DF-ZE2
Lifecycle:
New from this manufacturer.
Delivery:
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