NCP1207A, NCP1207B
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4
MAXIMUM RATINGS
Rating Symbol Value Units
Power Supply Voltage, V
CC
Pin, Continuous Voltage V
CC
Static 20 V
Transient Power Supply Voltage, Duration < 10 ms, I
VCC
< 20 mA V
CC
Pulse 25 V
Maximum Voltage on Pin 5 (Drv) 20 V
Maximum Voltage on all other pins except Pin 8 (HV), Pin 6 (V
CC
) and Pin 5 (Drv) −0.3 to 10 V
Maximum Current for all pins except V
CC
(6), HV (8) and Demag (1) when 10 V ESD diodes are
activated
5.0 mA
Maximum Current in Pin 1 Idem +3.0/−2.0 mA
Thermal Resistance, Junction−to−Case
R
q
JC
57 °C/W
Thermal Resistance, Junction−to−Air, SOIC version
R
q
JA
178 °C/W
Thermal Resistance, Junction−to−Air, DIP8 version
R
q
JA
100 °C/W
Operating Junction Temperature T
J
−40 to +125 °C
Maximum Junction Temperature TJ
MAX
150 °C
Temperature Shutdown 155 °C
Hysteresis in Shutdown 30 °C
Storage Temperature Range −60 to +150 °C
ESD Capability, HBM Model (All pins except HV) 2.0 kV
ESD Capability, Machine Model 200 V
Maximum Voltage on Pin 8 (HV), Pin 6 (V
CC
) decoupled to ground with 10 mF
V
HVMAX
500 V
Minimum Voltage on Pin 8 (HV), Pin 6 (V
CC
) decoupled to ground with 10 mF
V
HVMIN
40 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This device series contains ESD protection rated using the following tests:
Human Body Model (HBM) 2000 V per JEDEC Standard JESD22, Method A114E.
Machine Model (MM) 200 V per JEDEC Standard JESD22, Method A115A.
NCP1207A, NCP1207B
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5
ELECTRICAL CHARACTERISTICS (For typical values T
J
= 25°C, for min/max values T
J
= 0°C to +125°C, Max T
J
= 150°C,
V
CC
= 11 V unless otherwise noted)
Rating
Pin Symbol Min Typ Max Unit
DYNAMIC SELF−SUPPLY
V
CC
Increasing Level at which the Current Source Turns−off 6 VCC
OFF
10.8 12 12.9 V
V
CC
Decreasing Level at which the Current Source Turns−on 6 VCC
ON
9.1 10 10.6 V
V
CC
Decreasing Level at which the Latchoff Phase Ends 6 VCC
latch
5.3 V
V
CC
Level at which Output Pulses are Disabled 6 UVLO VCC
ON
−200mV
V
Internal IC Consumption, No Output Load on Pin 5,
F
SW
= 60 kHz
6 ICC1 1.0 1.3
(Note 2)
mA
Internal IC Consumption, 1.0 nF Output Load on Pin 5,
F
SW
= 60 kHz
6 ICC2 1.6 2.0
(Note 2)
mA
Internal IC Consumption in Latchoff Phase 6 ICC3 330
mA
INTERNAL STARTUP CURRENT SOURCE (T
J
u 0°C)
High−voltage Current Source, V
CC
= 10 V 8 IC1 4.3 7.0 9.6 mA
High−voltage Current Source, V
CC
= 0 8 IC2 8.0 mA
DRIVE OUTPUT
Output Voltage Rise−time @ CL = 1.0 nF, 10−90% of Output Signal
5 T
r
40 ns
Output Voltage Fall−time @ CL = 1.0 nF, 10−90% of Output Signal 5 T
f
20 ns
Source Resistance 5 R
OH
12 20 36
W
Sink Resistance 5 R
OL
5.0 10 19
W
CURRENT COMPARATOR (Pin 5 Unloaded)
Input Bias Current @ 1.0 V Input Level on Pin 3
3 I
IB
0.02
mA
Maximum Internal Current Setpoint 3 I
Limit
0.92 1.0 1.12 V
Propagation Delay from Current Detection to Gate OFF State 3 T
DEL
100 160 ns
Leading Edge Blanking Duration 3 T
LEB
380 ns
Internal Current Offset Injected on the CS Pin during OFF Time 3 Iskip 200
mA
OVERVOLTAGE SECTION (V
CC
= 11 V)
Sampling Delay after ON Time NCP1207A
NCP1207B
1 T
sample
4.5
1.5
ms
OVP Internal Reference Level 1 V
ref
6.4 7.2 8.0 V
FEEDBACK SECTION (V
CC
= 11 V, Pin 5 Loaded by 1.0 kW)
Internal Pull−up Resistor
2 Rup 20
kW
Pin 3 to Current Setpoint Division Ratio Iratio 3.3
Internal Soft−start Tss 1.0 ms
DEMAGNETIZATION DETECTION BLOCK
Input Threshold Voltage (Vpin 1 Decreasing)
1 V
th
35 50 90 mV
Hysteresis (Vpin 1 Decreasing) 1 V
H
20 mV
Input Clamp Voltage High State (Ipin 1 = 3.0 mA)
Low State (Ipin 1 = −2.0 mA)
1
1
VC
H
VC
L
8.0
−0.9
10
−0.7
12
−0.5
V
V
Demag Propagation Delay 1 T
dem
210 ns
Internal Input Capacitance at Vpin 1 = 1.0 V 1 C
par
10 pF
Minimum T
OFF
(Internal Blanking Delay after T
ON
) NCP1207A
NCP1207B
1 T
blank
3.5
8.0
4.5
5.5
ms
Timeout After Last Demag Transition 1 T
out
5.0
ms
Pin 1 Internal Impedance 1 R
int
28
kW
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Max value at T
J
= 0°C.
NCP1207A, NCP1207B
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6
Figure 3. Internal IC Consumption (No Output
Load) versus Temperature
Figure 4. Internal IC Consumption (1.0 nF
Output Load) versus Temperature
TEMPERATURE (°C) TEMPERATURE (°C)
1251007550250−50
0.4
0.6
0.8
1.0
1.2
1.4
1.6
12
5
1007550250−50
1.1
1.3
1.5
1.7
1.9
2.1
2.3
I
CC1
(mA)
I
CC2
(mA)
Figure 5. VCC Increasing Level at which the
Current Source Turns−Off versus Temperature
Figure 6. VCC Decreasing Level at which the
Current Source Turns−On versus Temperature
TEMPERATURE (°C) TEMPERATURE (°C)
1251007550250−50
10.4
10.9
11.4
11.9
12.4
12.9
12
5
1007550250−50
8.8
9.3
9.8
10.3
10.8
VCC
OFF
(V)
VCC
ON
(V)
Figure 7. Internal Startup Current Source at
V
CC
= 10 V versus Temperature
Figure 8. Source and Sink Resistance versus
Temperature
TEMPERATURE (°C)
1251007550250−50
2
4
6
8
10
12
I
C1
(mA)
TEMPERATURE (°C)
12
5
1007550250−50
0
5
10
15
20
25
35
40
R
OH
& R
OL
(W)
30
3
5
7
9
11
−25 −25
−25 −25
−25
−25
R
OH
R
OL

NCP1207ADR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Switching Controllers Quasi Resonant Current Mode PWM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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