IDT74FCT810CTPY8

1
IDT74FCT810BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
COMMERCIAL TEMPERATURE RANGE
MAY 2010
2001 Integrated Device Technology, Inc. DSC-4646/3c
IDT74FCT810BT/CT
COMMERCIAL TEMPERATURE RANGE
FAST CMOS
BUFFER/CLOCK DRIVER
FUNCTIONAL BLOCK DIAGRAM
FEATURES:
0.5 MICRON CMOS Technology
Guaranteed low skew < 600ps (max.)
Very low duty cycle distortion < 700ps (max.)
Low CMOS levels
TTL compatible inputs and outputs
TTL level output voltage swings
High drive: -32mA I
OH, +48mA IOL
Two independent output banks with 3-state control:
One 1:5 inverting bank
One 1:5 non-inverting bank
Available in QSOP, SSOP, and SOIC packages
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
PIN CONFIGURATION
QSOP/ SOIC/ SSOP
TOP VIEW
DESCRIPTION:
The 74FCT810T is a dual bank inverting/ non-inverting clock driver
built using advanced dual metal CMOS technology. It consists of two banks
of drivers, one inverting and one non-inverting. Each bank drives five output
buffers from a standard TTL-compatible input. The FCT810T has low output
skew, pulse skew and package skew. Inputs are designed with hysteresis
circuitry for improved noise immunity. The outputs are designed with TTL
output levels and controlled edge rates to reduce signal noise. The part has
multiple grounds, minimizing the effects of ground inductance.
OEA
INA
OA1 -OA5
5
OEB
INB
OB1 -OB5
5
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
OA
1
OA3
GND
OA
4
OA5
OA2
OEA
INA
VCC
GND
OB
1
OB2
OB3
GND
OB
4
GND
IN
B
OB5
OEB
VCC
2
COMMERCIAL TEMPERATURE RANGE
IDT74FCT810BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Description Max Unit
VTERM Terminal Voltage with Respect to GND –0.5 to +7 V
TSTG Storage Temperature –65 to +150 ° C
I
OUT DC Output Current –60 to +120 mA
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
PIN DESCRIPTION
Pin Names Description
OEA, OEB 3-State Output-Enable Inputs (Active LOW)
INA, INB Clock Inputs
OAx, OBx Clock Outputs
CAPACITANCE (TA = +25
O
C, f = 1.0MHz)
Symbol Parameter
(1)
Conditions Typ. Max. Unit
CIN Input Capacitance VIN = 0V 4.5 6 pF
COUT Output Capacitance VOUT = 0V 5.5 8 pF
NOTE:
1. This parameter is measured at characterization but not tested.
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Commercial: TA = 0°C to +70°C, VCC = 5V ± 5%
Symbol Parameter Test Conditions
(1)
Min. Typ.
(2)
Max. Unit
VIH Input HIGH Level (Input pins) Guaranteed Logic HIGH Level 2 V
VIL Input LOW Level Guaranteed Logic LOW Level 0.8 V
IIH Input HIGH Current (Input pins) VCC = Max. VI = 2.7V ±A
IIL Input LOW Current (Input pins) VCC = Max. VI = 0.5V ±A
IOZH High Impedance Output Current VCC = Max. VO = 2.7V ±A
IOZL (3-State Output pins) VO = 0.5V ±1
II Input HIGH Current VCC = Max., VI = VCC (Max.) ±A
VIK Clamp Diode Voltage VCC = Min., IIN = –18mA –0.7 –1.2 V
IOS Short Circuit Current VCC = Max., VO = GND
(3)
–60 –120 –225 mA
VOH Output HIGH Voltage VCC = Min. IOH = –15mA 2.4 3.3 V
VIN = VIH or VIL IOH = –32mA
(4)
23
VOL Output LOW Voltage VCC = Min. IOL = 48mA 0.3 0.55 V
VIN = VIH or VIL
IOFF Input/Output Power Off Leakage VCC = 0V, VIN or VO 4.5V ±A
VH Input Hysteresis for all inputs 150 mV
ICCL Quiescent Power Supply Current VCC = Max., VIN = GND or VCC 5 500 µA
ICCH
ICCZ
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
4. Duration of the condition should not exceed one second.
3
IDT74FCT810BT/CT
FAST CMOS BUFFER/CLOCK DRIVER
COMMERCIAL TEMPERATURE RANGE
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 5V, +25°C ambient.
3. Per TTL driven input (VIN = 3.4V); all other inputs at VCC or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply calculations.
5. Values for these conditions are examples of the IC formula. These limits are guaranteed but not tested.
6. IC = IQUIESCENT + IINPUTS + IDYNAMIC
IC = ICC + ICC DHNT + ICCD (fONO)
ICC = Quiescent Current (ICCL, ICCH and ICCZ)
ICC = Power Supply Current for a TTL High Input (VIN = 3.4V)
DH = Duty Cycle for TTL Inputs High
NT = Number of TTL Inputs at DH
ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
fO = Output Frequency
NO = Number of Outputs at fO
All currents are in milliamps and all frequencies are in megahertz.
POWER SUPPLY CHARACTERISTICS
Symbol Parameter Test Conditions
(1)
Min. Typ.
(2)
Max. Unit
I
CC Quiescent Power Supply Current VCC = Max. 0.5 2 mA
TTL Inputs HIGH VIN = 3.4V
(3)
ICCD Dynamic Power Supply Current
(4)
VCC = Max. VIN = VCC 60 100 µA/MHz
Outputs Open V
IN = GND
OE
A = OEB = GND
50% Duty Cycle
IC Total Power Supply Current
(6)
VCC = Max. VIN = VCC 7.5 13 mA
Outputs Open V
IN = GND
f
O = 25MHz
50% Duty Cycle V
IN = 3.4V 7.8 14
OE
A = GND, OEB = VCC VIN = GND
VCC = Max. VIN = VCC 30 50.5
(5)
Outputs Open VIN = GND
f
O = 50MHz
50% Duty Cycle VIN = 3.4V 30.5 52.5
(5)
OEA = OEB = GND VIN = GND

IDT74FCT810CTPY8

Mfr. #:
Manufacturer:
Description:
IC CLK BUFFER 1:5 100MHZ 20SSOP
Lifecycle:
New from this manufacturer.
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