Document Number: 70445
S09-1503-Rev. B, 10-Aug-09
www.vishay.com
5
Vishay Siliconix
Si2316BDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
*The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70445
.
Current Derating*
0
1
2
3
4
5
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Foot
0.0
0.4
0.8
1.2
1.6
2.0
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-
3
10
-
2
1 10 60010
-
1
10
-
4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 130 °C/W
3. T
JM
T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
