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HMC8402

P1-P3P4-P6P7-P9P10-P12P13-P15
2 GHz to 30 GHz, GaAs, pHEMT, MMIC,
Low Noise Amplifier
Data Sheet
HMC8402
Rev. A Document Feedback
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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Tel: 781.329.4700 ©2016 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
FEATURES
Output power for 1 dB compression (P1dB): 21.5 dBm typical
Saturated output power (P
SAT
): 22 dBm typical
Gain: 13.5 dB typical
Noise figure: 2 dB
Output third-order intercept (IP3): 26 dBm typical
Supply voltage: 7 V at 68 mA
50 Ω matched input/output
Die size: 2.7 mm × 1.35 mm × 0.05 mm
APPLICATIONS
Test instrumentation
Microwave radios and very small aperture terminals (VSATs)
Military and space
Telecommunications infrastructure
Fiber optics
GENERAL DESCRIPTION
The HMC8402 is a gallium arsenide (GaAs), pseudomorphic
high electron mobility transistor (pHEMT), monolithic microwave
integrated circuit (MMIC), low noise amplifier which operates
between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of
gain, 2 dB noise figure, 26 dBm output IP3, and 21.5 dBm of
output power at 1 dB gain compression while requiring 68 mA
from a 7 V supply. The HMC8402 is self biased with only a single
positive supply needed to achieve a drain current I
DQ
of 68 mA.
The HMC8402 amplifier input/outputs are internally matched to
50 Ω facilitating integration into multichip modules (MCMs). All
data is taken with the chip connected via two 0.025 mm (1 mil)
wire bonds of minimal length 0.31 mm (12 mils).
FUNCTIONAL BLOCK DIAGRAM
Figure 1.
V
DD
3
2
RFIN
V
GG
2
RFOUT
1
4
HMC8402
13853-001
HMC8402 Data Sheet
Rev. A | Page 2 of 15
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
2 GHz to 18 GHz Frequency Range ........................................... 3
18 GHz to 26 GHz Frequency Range ......................................... 3
26 GHz to 30 GHz Frequency Range ......................................... 4
Absolute Maximum Ratings ............................................................ 5
ESD Caution .................................................................................. 5
Pin Configuration and Function Descriptions ............................. 6
Interface Schematics .....................................................................6
Typical Performance Characteristics ..............................................7
Theory of Operation ...................................................................... 12
Applications Information .............................................................. 13
Biasing Procedures ..................................................................... 13
Mounting and Bonding Techniques for Millimeterwave GaAs
MMICs ......................................................................................... 13
Typical Application Circuit ....................................................... 14
Assembly Diagram ..................................................................... 14
Outline Dimensions ....................................................................... 15
Ordering Guide .......................................................................... 15
REVISION HISTORY
10/2016—Rev. 0 to Rev. A
Change to Table 4 ............................................................................. 5
Changes to Figure 8 .......................................................................... 7
Updated Outline Dimensions ....................................................... 15
7/2016—Revision 0: Initial Version
Data Sheet HMC8402
Rev. A | Page 3 of 15
SPECIFICATIONS
2 GHz TO 18 GHz FREQUENCY RANGE
T
A
= 25°C, V
DD
= 7 V, I
DQ
= 74 mA.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 2 18 GHz
GAIN 11.5 13.5 dB
Gain Variation Over Temperature 0.005 dB/°C
RETURN LOSS
Input 10 dB
Output 12 dB
OUTPUT
Output Power for 1 dB Compression P1dB 19 21 dBm
Saturated Output Power P
SAT
22 dBm
Output Third-Order Intercept IP3 Measurement taken at P
OUT
/tone = 0 dBm 26 dBm
NOISE FIGURE NF 2.5 5 dB
SUPPLY CURRENT
Total Supply Current I
DQ
Nominal voltage (V
DD
) = 7 V 45 68 85 mA
Total Supply Current vs. V
DD
I
DQ
V
DD
= 5 V 62 mA
V
DD
= 6 V 65 mA
V
DD
= 7 V 68 mA
V
DD
= 8 V
72
mA
SUPPLY VOLTAGE V
DD
5 7 8 V
18 GHz TO 26 GHz FREQUENCY RANGE
T
A
= 25°C, V
DD
= 7 V, I
DQ
= 74 mA.
Table 2.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 18 26 GHz
GAIN 11.5 13.5 dB
Gain Variation Over Temperature 0.006 dB/°C
RETURN LOSS
Input 17 dB
Output 14 dB
OUTPUT
Output Power for 1 dB Compression P1dB 17 20 dBm
Saturated Output Power P
SAT
21 dBm
Output Third-Order Intercept IP3 Measurement taken at P
OUT
/tone = 0 dBm 24 dBm
NOISE FIGURE NF 2.5 4 dB
SUPPLY CURRENT
Total Supply Current I
DQ
Nominal voltage (V
DD
) = 7 V 45 68 85 mA
Total Supply Current vs. V
DD
I
DQ
V
DD
= 5 V 62 mA
V
DD
= 6 V 65 mA
V
DD
= 7 V 68 mA
V
DD
= 8 V 72 mA
SUPPLY VOLTAGE
V
DD
7
8
V
P1-P3P4-P6P7-P9P10-P12P13-P15

HMC8402

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