January 1995 3
Philips Semiconductors Product specification
Quadruple bilateral switches
HEF4016B
gates
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
DC CHARACTERISTICS
T
amb
=25°C; V
SS
= 0 V (unless otherwise specified)
Power dissipation per switch P max. 100 mW
For other RATINGS see Family Specifications
PARAMETER
V
DD
V
SYMBOL TYP. MAX. UNIT CONDITIONS
5 8000 −ΩE
n
at V
IH
; V
is
= 0 to V
DD
; see Fig.4
ON resistance 10 R
ON
230 690 Ω
15 115 350 Ω
5 140 425 Ω E
n
at V
IH
; V
is
=V
SS
; see Fig.4
ON resistance 10 R
ON
65 195 Ω
15 50 145 Ω
5 170 515 Ω E
n
at V
IH
; V
is
=V
DD
; see Fig.4
ON resistance 10 R
ON
95 285 Ω
15 75 220 Ω
‘∆’ ON resistance 5 200 −ΩE
n
at V
IH
; V
is
= 0 to V
DD
; see Fig.4
between any two 10 ∆R
ON
15 −Ω
channels 15 10 −Ω
PARAMETER
V
DD
V SYMBOL
T
amb
(°C)
UNIT−40 + 25 + 85 CONDITION
MIN. MAX. MIN. MAX. MIN. MAX.
Quiescent 5 − 1,0 − 1,0 − 7,5 µAV
SS
= 0; all valid
input combinations;
V
I
=V
SS
or V
DD
device 10 I
DD
− 2,0 − 2,0 − 15,0 µA
current 15 − 4,0 − 4,0 − 30,0 µA
Input leakage
15 ± I
IN
−−−300 − 1000
nA E
n
at V
SS
or V
DD
current at E
n
OFF-state leakage 5 −−−−−−nA E
n
at V
IL
;
V
is
=V
SS
or V
DD
;
V
os
=V
DD
or V
SS
current, any 10 I
OZ
−−−−−−nA
channel OFF 15 −−−200 −−nA
E
n
input 5 − 1,5 − 1,5 − 1,5 V switch OFF; see
Fig.9 for I
OZ
voltage LOW 10 V
IL
− 3,0 − 3,0 − 3,0 V
15 − 4,0 − 4,0 − 4,0 V
E
n
input 5 3,5 − 3,5 − 3,5 − V low-impedance
between Y and Z (ON
condition)
see R
ON
switch
voltage HIGH 10 V
IH
7,0 − 7,0 − 7,0 − V
15 11,0 − 11,0 − 11,0 − V
