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PBHV9040Z,115

P1-P3P4-P6P7-P9P10-P12P13-P13
PBHV9040Z_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 January 2009 3 of 12
NXP Semiconductors
PBHV9040Z
500 V, 0.25 A PNP high-voltage low V
CEsat
(BISS) transistor
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −500 V
V
CEO
collector-emitter voltage open base - −400 V
V
CESM
collector-emitter peak
voltage
V
BE
=0V - −500 V
V
EBO
emitter-base voltage open collector - −6V
I
C
collector current - −0.25 A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −0.5 A
I
BM
peak base current single pulse;
t
p
≤ 1ms
- −200 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
0.7 W
[2]
1.4 W
T
j
junction temperature - 150 °C
T
amb
ambient temperature −55 +150 °C
T
stg
storage temperature −65 +150 °C
(1) FR4 PCB, mounting pad for collector 6 cm
2
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
T
amb
(°C)
−75 17512525 75−25
006aab155
800
400
1200
1600
P
tot
(mW)
0
(1)
(2)
PBHV9040Z_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 January 2009 4 of 12
NXP Semiconductors
PBHV9040Z
500 V, 0.25 A PNP high-voltage low V
CEsat
(BISS) transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 175 K/W
[2]
--89K/W
R
th(j-sp)
thermal resistance from
junction to solder point
--20K/W
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for collector 6 cm
2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab156
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
006aab157
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
PBHV9040Z_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 January 2009 5 of 12
NXP Semiconductors
PBHV9040Z
500 V, 0.25 A PNP high-voltage low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −320 V; I
E
=0A - - −100 nA
V
CB
= −320 V; I
E
=0A;
T
j
= 150 °C
--−10 µA
I
CES
collector-emitter
cut-off current
V
CE
= −320 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −4 V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −10 V
I
C
= −50 mA 100 200 -
I
C
= −100 mA 80 200 -
I
C
= −250 mA
[1]
10 25 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −100 mA; I
B
= −20 mA - −110 −200 mV
V
BEsat
base-emitter
saturation voltage
I
C
= −100 mA; I
B
= −20 mA
[1]
- −1 −1.1 V
f
T
transition frequency V
CE
= −10 V; I
E
= −10 mA;
f = 100 MHz
- 55 - MHz
C
c
collector capacitance V
CB
= −20 V; I
E
=i
e
=0A;
f=1MHz
-7-pF
C
e
emitter capacitance V
EB
= −0.5 V; I
C
=i
c
=0A;
f=1MHz
- 150 - pF
t
d
delay time V
CC
= −2 V; I
C
= −0.15 A;
I
Bon
= −0.03 A;
I
Boff
= 0.03 A
-9-ns
t
r
rise time - 1810 - ns
t
on
turn-on time - 1819 - ns
t
s
storage time - 715 - ns
t
f
fall time - 1085 - ns
t
off
turn-off time - 1800 - ns
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PBHV9040Z,115

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Buy PBHV9040Z,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS HV BISS TAPE-7
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